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公开(公告)号：US20240322790A1
公开(公告)日：2024-09-26
申请号：US18614849
申请日：2024-03-25
发明人： Zachary Schaffer , Gianluca Piazza
CPC分类号： H03H9/17 , H03H9/02015 , H03H9/566
摘要： Disclosed herein is an Overmoded Bulk Acoustic Resonator (OBAR) and a solidly-mounted OBAR (SBAR), which operate in a partially transduced 2nd overtone split between piezoelectric and electrode layers using dual all metal Bragg mirrors. The devices may be deployed in a series configuration. The devices have arbitrarily thick electrodes to minimize ohmic loss and bandwidths high enough to meet filtering requirements of 5G networks. The devices provide sharp filtering which can be performed directly at each antenna element in a form factor much smaller than the half-wavelength separation between adjacent antenna elements required when using electromagnetic resonators.
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公开(公告)号：US12095444B2
公开(公告)日：2024-09-17
申请号：US17019049
申请日：2020-09-11
发明人： Patrick Turner , Carolyn Bianco , Charles Chung
CPC分类号： H03H9/17 , H03H3/02 , H03H9/02015 , H03H9/13 , H10N30/06
摘要： Methods of fabricating acoustic devices are disclosed. A lateral etch stop is formed in a substrate. A back surface of a piezoelectric plate is attached to a front surface of the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern including interleaved fingers of an interdigital transducer (IDT). A cavity is etched in the substrate using an etchant introduced through one or more openings in the piezoelectric plate. A lateral extent of the cavity is defined by the lateral etch stop. After etching the cavity, a portion of the piezoelectric plate forms a diaphragm spanning the cavity with the interleaved fingers of the IDT disposed on the diaphragm.
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公开(公告)号：US20240305272A1
公开(公告)日：2024-09-12
申请号：US18597235
申请日：2024-03-06
发明人： Benjamin Paul Abbott , Mats Erik Fredriksson , Alexandre Augusto Shirakawa , David Albert Feld , Jiansong Liu
摘要： Disclosed herein is a bulk acoustic wave filter comprising a number of acoustic wave resonators, each acoustic wave resonator being encompassed by a polygon including vertices of a mesh optimized to provide a reduced filter size of the bulk acoustic wave filter integrated on a die.
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公开(公告)号：US20240235522A9
公开(公告)日：2024-07-11
申请号：US18548275
申请日：2021-03-22
摘要： Various embodiments may relate to a resonator. The resonator may include a support including a substrate portion, and a membrane portion extending from the substrate portion over a cavity. The resonator may also include a piezoelectric layer on the membrane portion. The resonator may further include an electrode on the piezoelectric layer. The substrate portion may include dopants of a first conductivity type. The membrane portion may include dopants of a second conductivity type different from the first conductivity type. A ratio of a thickness of the membrane portion to a combined thickness of the electrode and the piezoelectric layer may be above 3:1 for temperature compensation.
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5.发明授权公开(公告)号：US11967940B2
公开(公告)日：2024-04-23
申请号：US17564805
申请日：2021-12-29
申请人： QXONIX, INC.
发明人： Dariusz Burak , Kevin J. Grannen , Jack Lenell
CPC分类号： H03H9/02259 , H03H3/02 , H03H9/02015 , H03H9/0207 , H03H9/02102 , H03H9/0211 , H03H9/02157 , H03H9/13 , H03H9/131 , H03H9/17 , H03H9/173 , H03H9/175 , H03H9/205 , H03H9/54 , H03H9/568 , H03H2003/021 , H03H2009/02165
摘要： Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of piezoelectric material having a piezoelectrically excitable resonance mode may be provided. The first layer of piezoelectric material may have a thickness so that the bulk acoustic wave resonator has a resonant frequency. The first layer of piezoelectric material may include a first pair of sublayers of piezoelectric material, and a first layer of temperature compensating material. A substrate may be provided.
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公开(公告)号：US11962282B2
公开(公告)日：2024-04-16
申请号：US17323598
申请日：2021-05-18
发明人： Shinji Yamamoto , Toshio Nishizawa , Naoki Kakita
CPC分类号： H03H9/02102 , H03H9/0504 , H03H9/132 , H03H9/17 , H03H9/54
摘要： An acoustic wave device including a support substrate, a piezoelectric layer provided over the support substrate, at least one pair of comb-shaped electrodes disposed on the piezoelectric layer, each of the at least one pair of comb-shaped electrodes including electrode fingers, a temperature compensation film interposed between the support substrate and the piezoelectric layer, the temperature compensation film having a temperature coefficient of elastic constant opposite in sign to a temperature coefficient of elastic constant of the piezoelectric layer; and an insulating layer interposed between the support substrate and the temperature compensation film, a first surface of the insulating layer having first protruding portions and/or first recessed portions, a second surface of the insulating layer having second protruding portions and/or second recessed portions, the first surface being closer to the support substrate, the second surface being closer to the temperature compensation film.
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公开(公告)号：US20240113683A1
公开(公告)日：2024-04-04
申请号：US18537870
申请日：2023-12-13
发明人： Masashi OMURA
摘要： An acoustic wave device includes a support, a piezoelectric layer with an anisotropic coefficient of linear expansion, and including first and second main surfaces, at least one through-hole, a first electrode in or on the first main surface, and a second electrode in or on the second main surface and opposed to the first electrode. A cavity is provided in the support. At least a portion of the first and second electrodes overlaps the cavity in plan view. In plan view, the at least one through-hole is line symmetric about an axis of symmetry that passes a center of the cavity in a region where the first and second electrodes overlap each other and that extends in a direction in which the coefficient of linear expansion of the piezoelectric layer is greatest.
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公开(公告)号：US20240097654A1
公开(公告)日：2024-03-21
申请号：US18220344
申请日：2023-07-11
申请人： Qorvo US, Inc.
发明人： Nadim Khlat
摘要： An acoustic transformer in a transmitter chain is disclosed. In one aspect, a differential power amplifier may produce a differential signal that is provided to a first transformer. A differential output of this first transformer is provided to an acoustic transformer that provides a single ended output signal for use by an acoustic filter. By making the second transformer an acoustic transformer, the second transformer may be integrated into the same circuitry that forms the acoustic filter, thereby simplifying the die. Further, the acoustic transformer may be tuned if ferroelectric resonators are used, which provides strong out-of-band signal cancelation.
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公开(公告)号：US20240072761A1
公开(公告)日：2024-02-29
申请号：US18354249
申请日：2023-07-18
申请人： Qorvo US, Inc.
发明人： Alireza Tajic , Thomas Berer , Istvan Veres
摘要： The present disclosure relates to a bulk acoustic wave (BAW) resonator that includes a bottom electrode, a piezoelectric layer over the bottom electrode, and a top electrode structure with a top electrode and the dual-step BO ring structure. Herein, the dual-step BO structure is formed over the piezoelectric layer and about a periphery of the top electrode structure, such that a central portion of the piezoelectric layer is not covered by the dual-step BO structure. The dual-step BO structure is formed of an oxide material and includes an inner BO ring with a first height and an outer BO ring with a second height that is larger than the first height, such that the dual-step BO structure decreases in height toward the central portion of the piezoelectric layer. The top electrode is formed over the central portion of the piezoelectric layer and extends over the dual-step BO structure.
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公开(公告)号：US20240056051A1
公开(公告)日：2024-02-15
申请号：US18383924
申请日：2023-10-26
摘要： An acoustic wave device includes a first layer including a support substrate, a second layer on the first layer and including a piezoelectric film, and a first excitation electrode on the second layer. A cavity is between the first and second layers, and the first excitation electrode at least partially overlaps the cavity in a stacking direction of the first and second layers. A surface roughness of a major surface of the first layer facing the cavity is different from a surface roughness of a major surface of the second layer facing the cavity.
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