公开(公告)号：US12199125B2

公开(公告)日：2025-01-14

申请号：US17110298

申请日：2020-12-03

Applicant: PixArt Imaging Inc.

Inventor： Kai-Chieh Chuang ,  Yung-Chung Lee ,  Yen-Min Chang

IPC: H01L27/146 ,  H04N25/59

Abstract: There is provided a structure to improve BSI global shutter efficiency. In a sensor pixel circuit, at least one strong electric field is formed at the position of a floating diffusion region to accordingly have the effect of shielding the floating diffusion region. Or, the semiconductor material from the floating diffusion node toward a light incident direction is removed in the manufacturing process such that a depletion region cannot be formed in this direction. Or, a reflection layer or a photoresist layer is formed in the light incident direction to block the light. In these ways, charges generated by the undesired noises are reduced, and noise charges are difficult to reach the floating diffusion region thereby improving the shutter efficiency.

公开(公告)号：US10930698B2

公开(公告)日：2021-02-23

申请号：US16383663

申请日：2019-04-15

Applicant: PixArt Imaging Inc.

Inventor： Kai-Chieh Chuang ,  Yung-Chung Lee ,  Yen-Min Chang

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/353 ,  H04N5/378

Abstract: There is provided a structure to improve BSI global shutter efficiency. In a sensor pixel circuit, at least one strong electric field is formed at the position of a floating diffusion region to accordingly have the effect of shielding the floating diffusion region. Or, the semiconductor material from the floating diffusion node toward a light incident direction is removed in the manufacturing process such that a depletion region cannot be formed in this direction. Or, a reflection layer or a photoresist layer is formed in the light incident direction to block the light. In these ways, charges generated by the undesired noises are reduced, and noise charges are difficult to reach the floating diffusion region thereby improving the shutter efficiency.

公开(公告)号：US11018170B2

公开(公告)日：2021-05-25

申请号：US16455964

申请日：2019-06-28

Applicant: PIXART IMAGING INC.

Inventor： Kuan Tang ,  Jui-Te Chiu ,  Yi-Cheng Chiu ,  Chia-Chi Kuo ,  Kai-Chieh Chuang

IPC: H01L27/146

Abstract: An image sensor includes a pair of pixel sharing circuits, a second reset transistor, an amplifier transistor, a readout transistor and a control circuit. The pair of pixel sharing circuits connected to a floating diffusion node, each including a photon device, a first reset transistor, a capture transistor, a holding transistor, a capacitor and a sharing transistor. The control circuit is configured to control the first reset transistor, the first capture transistor, the first holding transistor and the sharing transistor of each of the pair of sharing pixel circuits to be turned on or off.