公开(公告)号：US10329661B2

公开(公告)日：2019-06-25

申请号：US14764007

申请日：2014-01-29

申请人： PLANSEE SE

发明人： Christian Linke ,  Jiehua Li ,  Peter Schumacher ,  Wolfram Knabl ,  Gerhard Leichtfried

IPC分类号： C23C14/34 ,  B22F3/02 ,  B22F3/12 ,  B22F9/08 ,  B22F9/04 ,  B22F1/00 ,  C22C30/02 ,  C22C24/00 ,  H01J37/34 ,  H01L31/18 ,  C22C1/04 ,  C22C9/00 ,  C22C28/00 ,  B22F3/15 ,  B22F3/105

摘要： A sputtering target is composed of an alloy consisting of 5 to 70 at % of at least one element from the group of (Ga, In) and 0.1 to 15 at % of Na, the remainder being Cu and typical impurities. The sputtering target includes at least one intermetallic Na-containing phase.