公开(公告)号：US20200098862A1

公开(公告)日：2020-03-26

申请号：US16562693

申请日：2019-09-06

Applicant: POSTECH ACADEMY - INDUSTRY FOUNDATION

Inventor： Rock Hyun Baek ,  Jun Sik Yoon ,  Jin Su Jeong ,  Seung Hwan Lee

IPC: H01L29/08 ,  H01L29/66

Abstract: Disclosed is a metal source/drain-based field effect transistor having a structure that replaces a portion of a semiconductor of a source/drain with a metal and a method of manufacturing the same. By replacing the source/drain region with the source/drain metal region, increase of the parasitic resistance of a conventional three-dimensional MOSFET of several tens of nanometers, lattice mismatch of the source/drain during selective epitaxial growth, and self-heating effect can be fundamentally solved. Further, since the metal is deposited after the partial etching of the source/drain region or the selective epitaxial growth is partially performed under the conventional CMOS process, the process can be performed without using any additional mask.