公开(公告)号：US20240084444A1

公开(公告)日：2024-03-14

申请号：US18282037

申请日：2022-01-13

申请人： POSTECH Academy-Industry Foundation

发明人： Jun Suk RHO ,  Young Hwan YANG ,  Gwan Ho YOON

IPC分类号： C23C16/24 ,  C23C16/505 ,  C23C16/56

CPC分类号： C23C16/24 ,  C23C16/505 ,  C23C16/56

摘要： According to an embodiment of the present invention, there is provided method for preparing low-loss hydrogenated amorphous silicon nitride that is transparent in visible light comprising: a step in which a substrate is provided; a step in which a Plasma Enhanced Chemical Vapor Deposition (PECVD) which is used to insert H2 gas and SiH4 gas into a chamber is used to deposit a dielectric layer 200 onto the substrate, and gases inserted into the chamber further comprise N2 gas apart from the H2 gas and the SiH4 gas.
Further, there is provided a method for preparing low-loss hydrogenated amorphous silicon oxide that is transparent in visible light further comprising O2 gas apart from the H2 gas and the SiH4 gas.
Further, there is provided a method for preparing low-loss hydrogenated amorphous silicon that is transparent in visible light further comprising Ar gas apart from the H2 gas and the SiH4 gas.