公开(公告)号：US12112972B2

公开(公告)日：2024-10-08

申请号：US17221215

申请日：2021-04-02

申请人： Applied Materials, Inc.

发明人： Qiwei Liang ,  Douglas Arthur Buchberger, Jr. ,  Gautam Pisharody ,  Dmitry Lubomirsky ,  Shekhar Athani

IPC分类号： H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/683

CPC分类号： H01L21/68785 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/463 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32724 ,  H01J37/32899 ,  H01L21/6833 ,  H01L21/68792 ,  C23C16/45565 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706

摘要： Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor; a drive assembly coupled to the rotary union; a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line; an RF rotary joint coupled to the coolant union and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal.

公开(公告)号：US20240290586A1

公开(公告)日：2024-08-29

申请号：US18388129

申请日：2023-11-08

申请人： WONIK IPS CO., LTD.

发明人： Jae Hun LEE ,  Kyoung Pil NA ,  Yu Deuk KIM ,  Jae Gab LIM ,  Jeong Jun LEE ,  Gun Hee CHO

IPC分类号： H01J37/32 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  H01L21/02

CPC分类号： H01J37/32853 ,  C23C16/308 ,  C23C16/345 ,  C23C16/36 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/45536 ,  C23C16/4583 ,  C23C16/505 ,  H01J37/32715 ,  H01J37/32788 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01J2237/2007 ,  H01J2237/332

摘要： A method of forming a thin film using a substrate processing apparatus includes placing the substrate on the electrostatic chuck, depositing the thin film on the substrate, transferring the substrate, and performing a hardening process. The depositing the thin film on the substrate applies a first DC power source to chuck the substrate, supplies a process gas and applies a first RF power source to form a first plasma to deposit the thin film on the substrate. The transferring the substrate transfers the substrate on which the thin film has been deposited outside the process chamber. The performing a hardening process applies a second DC power source, supplies a purge gas, and applies a second RF power source to form the plasma to harden a deposition film formed in an interior of the process chamber.

公开(公告)号：US20240240307A1

公开(公告)日：2024-07-18

申请号：US18410046

申请日：2024-01-11

申请人： Tokyo Electron Limited

发明人： Takafumi NOGAMI ,  Yoshiki NAKANO

IPC分类号： C23C16/34 ,  C23C16/455 ,  C23C16/505

CPC分类号： C23C16/345 ,  C23C16/45574 ,  C23C16/505

摘要： A method of forming a silicon nitride film includes: preparing a substrate in a processing container, the substrate having a graphene film on a surface of the substrate; supplying a nitrogen-containing gas into the processing container; supplying a Si precursor gas into the processing container after the nitrogen-containing gas is supplied and after a pressure control inside the processing container is stabilized; generating plasma within the processing container by supplying radio-frequency power for plasma generation after the Si precursor gas is supplied and before the pressure control inside the processing container is stabilized; and forming the silicon nitride film on the graphene film by exposing the substrate to the plasma.

公开(公告)号：US12027351B2

公开(公告)日：2024-07-02

申请号：US17145202

申请日：2021-01-08

申请人： COMET TECHNOLOGIES USA, INC.

发明人： Stephen E. Savas ,  Alexandre De Chambrier

IPC分类号： H01J37/32 ,  C23C16/505 ,  C23C16/52 ,  G01N22/00 ,  H01L21/67

CPC分类号： H01J37/3299 ,  C23C16/505 ,  C23C16/52 ,  G01N22/00 ,  H01J37/32082 ,  H01J37/32715 ,  H01L21/67253 ,  H01J2237/24564 ,  H01J2237/3345

摘要： A method of detecting non-uniformity in a plasma in a radio frequency plasma processing system, the method including generating a plasma within a reaction chamber of the radio frequency plasma processing system and detecting electrical signals from the plasma in a frequency range from a frequency of radio frequency power sustaining the plasma to a multiple of about ten times a frequency with a plurality of sensors disposed azimuthally about a chamber symmetry axis of the radio frequency plasma processing system. The method also including comparing the waveforms of the electrical signals picked up from the plasma by the plurality of sensors and determining when a plasma non-uniformity occurs based on the comparing the electrical property of the plasma detected by each of the plurality of sensors.

公开(公告)号：US20240158645A1

公开(公告)日：2024-05-16

申请号：US18548343

申请日：2022-02-25

申请人： JIANGSU FAVORED NANOTECHNOLOGY CO., LTD.

发明人： Jian ZONG ,  Siyue LI

IPC分类号： C09D5/08 ,  C09D4/00 ,  C09D133/06 ,  C09D133/16 ,  C09D135/02 ,  C23C16/505 ,  C23C16/515

CPC分类号： C09D5/08 ,  C09D4/00 ,  C09D133/062 ,  C09D133/16 ,  C09D135/02 ,  C23C16/505 ,  C23C16/515

摘要： Specific embodiments of the present disclosure provide a composite coating. In the composite coating, a plasma of a multifunctional-group monomer having an epoxy structure and a plasma of an ester-based coupling agent are used to form a coating as a base coating, and a plasma of an unsaturated ester-based monomer having aromatic ring(s) and a plasma of an ester-based coupling agent are used to form a coating as an anti-corrosion coating. The composite coating has a high binding force with a substrate and a strong corrosion resistance.

公开(公告)号：US20240102168A1

公开(公告)日：2024-03-28

申请号：US18263563

申请日：2022-01-11

申请人： JIANGSU FAVORED NANOTECHNOLOGY CO., LTD.

发明人： Jian ZONG

IPC分类号： C23C16/505 ,  C23C16/458 ,  C23C16/54

CPC分类号： C23C16/505 ,  C23C16/458 ,  C23C16/54

摘要： Provided are a plasma coating apparatus and a coating method. The plasma coating apparatus uses radio frequency discharge, and a discharge coil can be arranged in the lengthwise direction of a coating cavity, so as to provide a plasma environment for a base material when the base material moves within the coating cavity in the lengthwise direction of the coating cavity.

公开(公告)号：US20240102162A1

公开(公告)日：2024-03-28

申请号：US18163019

申请日：2023-02-01

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ,  NATIONAL TAIWAN UNIVERSITY

发明人： Chun-Yi CHOU ,  Chih-Piao CHUU ,  Miin-Jang CHEN

IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/505 ,  C23C16/56

CPC分类号： C23C16/45553 ,  C23C16/401 ,  C23C16/403 ,  C23C16/4408 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/505 ,  C23C16/56

摘要： A method includes following steps. A first precursor is pulsed over a substrate such that first precursor adsorbs on a first region and a second region of the substrate. A first plurality of the first precursor adsorbing on the first region is then removed using a plasma, while leaving a second plurality of the first precursor adsorbing on the second region. A second precursor is then pulsed to the substrate to form a monolayer of a film on the second region and a material on the first region. The material is then removed using a plasma. The substrate is biased during removing the material.

公开(公告)号：US11939673B2

公开(公告)日：2024-03-26

申请号：US17189591

申请日：2021-03-02

申请人： ASM IP Holding B.V.

发明人： John Kevin Shugrue ,  Carl Louis White

IPC分类号： C23C16/455 ,  C23C16/505 ,  G01J3/443 ,  G01N21/68 ,  H01J37/32 ,  G01N21/15

CPC分类号： C23C16/45536 ,  C23C16/45544 ,  C23C16/505 ,  G01J3/443 ,  G01N21/68 ,  H01J37/3244 ,  H01J37/32972 ,  G01N21/15 ,  G01N2201/08 ,  H01J2237/24485 ,  H01J2237/24507

摘要： An apparatus and method are disclosed for monitoring and/or detecting concentrations of a chemical precursor in a reaction chamber. The apparatus and method have an advantage of operating in a high temperature environment. An optical emissions spectrometer (OES) is coupled to a gas source, such as a solid source vessel, in order to monitor or detect an output of the chemical precursor to the reaction chamber. Alternatively, a small sample of precursor can be periodically monitored flowing into the OES and into a vacuum pump, thus bypassing the reaction chamber.

公开(公告)号：US20240096598A1

公开(公告)日：2024-03-21

申请号：US18522090

申请日：2023-11-28

申请人： Lam Research Corporation

发明人： Sunil Kapoor ,  Thomas Frederick

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/505 ,  C23C16/52 ,  G01N21/95 ,  G01R13/02 ,  G01R19/00 ,  G01R27/26 ,  H01L21/67 ,  H01L23/64

CPC分类号： H01J37/32155 ,  C23C16/45536 ,  C23C16/505 ,  C23C16/52 ,  G01N21/9501 ,  G01R13/02 ,  G01R19/0084 ,  G01R27/2605 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32899 ,  H01J37/3299 ,  H01L21/67253 ,  H01L23/642 ,  H01J2237/327 ,  H01L21/67028 ,  H01L21/67069 ,  H01L2223/6655

摘要： Methods and apparatus for measuring capacitance are disclosed.

公开(公告)号：US11929251B2

公开(公告)日：2024-03-12

申请号：US17103938

申请日：2020-11-24

申请人： ASM IP Holding B.V.

发明人： Toshihisa Nozawa

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  H01L21/683 ,  H01L23/00

CPC分类号： H01L21/02274 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/6833 ,  H01L23/562 ,  H01J2237/2007 ,  H01J2237/20235 ,  H01J2237/332

摘要： Examples of a substrate processing apparatus includes a chamber, an upper cover provided inside the chamber, an electrostatic chuck which includes an annular portion of a dielectric body and an embedded electrode embedded into the annular portion, the electrostatic chuck being provided inside the chamber, and a plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck, wherein the annular portion includes an annular first upper surface located immediately below the upper cover, and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than a height of the first upper surface.