公开(公告)号：US20250104787A1

公开(公告)日：2025-03-27

申请号：US18885111

申请日：2024-09-13

Applicant: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Seyoung KIM ,  Byoungwoo LEE ,  Jeonghoon SON ,  Seungkun KIM

IPC: G11C27/00 ,  G06N3/065 ,  H10B63/00 ,  H10N70/20

Abstract: The present disclosure relates to a three-terminal synaptic device for artificial neural network learning, a synaptic array using the same, and a method of operating the same. The three-terminal synaptic device includes a first transistor; an electrochemical memory (ECRAM) connected in parallel to the first transistor; and a second transistor connected in series to the parallel structure. Accordingly, the present disclosure can achieve an accuracy improvement of inference and learning operations in an artificial neural network through parallel operation by configuring a cross-point array based on the synaptic device with the three-terminal structure comprised of the electrochemical memory and two transistors.