公开(公告)号：US20250144816A1

公开(公告)日：2025-05-08

申请号：US18908921

申请日：2024-10-08

Applicant: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Seok KIM ,  Jun Hyung KIM

IPC: B25J15/00 ,  F03G7/06 ,  G03F7/00

Abstract: Disclosed is a transfer technology, in which a shape memory polymer surface with dense nanotips is designed to apply a micro-sized object such as a micro-LED to a mass transfer technology. According to the disclosure, the nanotip shape memory polymer surface is in contact with objects in a heated state, and the nanotip shape memory polymer surface in the heated state is excellent in surface adaptability, thereby attaching/embedding and transferring micro-sized objects.

公开(公告)号：US20250044698A1

公开(公告)日：2025-02-06

申请号：US18544920

申请日：2023-12-19

Applicant: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Seok KIM ,  Sangyeop LEE

IPC: G03F7/12 ,  B41N1/24 ,  G03F7/00

Abstract: Provided are a new ultrathin film silicon shadow mask which is flexible, is reusable, and can be precisely aligned and manipulated through transfer printing, and a lithography method using the same. A thin thickness of a silicon shadow mask may intrinsically form a pattern having an enhanced resolution in a plane and a non-planar surface. Further, the silicon shadow mask may be formed on a substrate by metal deposition in addition to etching in a multi-layer configuration by a transfer printing technology based alignment method. Through such a method, a material in which patterning is impossible may be patterned through photolithography.