公开(公告)号：US09484304B2

公开(公告)日：2016-11-01

申请号：US14426117

申请日：2013-08-30

申请人： PS4 Luxco S.a.r.l.

发明人： Kazuhiro Okuda ,  Shigeo Ishikawa ,  Hiroshi Amaike

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L23/53295 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76877 ,  H01L23/5221 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to prevent the detachment of a film which is a constituent part of an interlayer-insulating film, and to prevent a decline in the device properties of a semiconductor device, a semiconductor device is provided with an interlayer-insulating film having, in this order, a carbon-containing silicon nitride (SiCN) film, a first silicon nitride film, and a silicon oxide film or a carbon-containing silicon oxide (SiOC) film.

摘要翻译： 为了防止作为层间绝缘膜的组成部分的膜的分离，并且为了防止半导体器件的器件特性的劣化，半导体器件设置有层间绝缘膜，在该层 含碳氮化硅（SiCN）膜，第一氮化硅膜和氧化硅膜或含碳氧化硅（SiOC）膜。

公开(公告)号：US20150235961A1

公开(公告)日：2015-08-20

申请号：US14426117

申请日：2013-08-30

申请人： Ps4 Luxco S.a.r.l.

发明人： Kazuhiro Okuda ,  Shigeo Ishikawa ,  Hiroshi Amaike

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/53295 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76877 ,  H01L23/5221 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to prevent the detachment of a film which is a constituent part of an interlayer-insulating film, and to prevent a decline in the so device properties of a semiconductor device, a semiconductor device is provided with an interlayer-insulating film having, in this order, a carbon-containing silicon nitride (SiCN) film, a first silicon nitride film, and a silicon oxide film or a carbon-containing silicon oxide (SiOC) film.

摘要翻译： 为了防止作为层间绝缘膜的组成部分的膜的分离，并且为了防止半导体器件的器件特性的下降，半导体器件设置有层间绝缘膜，其具有 该次序，含碳氮化硅（SiCN）膜，第一氮化硅膜和氧化硅膜或含碳氧化硅（SiOC）膜。