公开(公告)号：US20230068224A1

公开(公告)日：2023-03-02

申请号：US17536518

申请日：2021-11-29

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  A Ram KIM ,  Song I HAN

IPC: H01J37/32

Abstract: Provided is a substrate processing apparatus including: a chuck configured to support a substrate; a dielectric plate disposed to face an upper surface of the substrate supported by the chuck; a gas supply unit configured to supply process gas to an edge region of the substrate; and a first edge electrode configured to generate plasma from the process gas to the edge region of the substrate supported by the chuck, in which the first edge electrode includes: a plurality of electrode units; and one or more insulating units provided between the electrode units.