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1.发明公开公开(公告)号：US20240274411A1
公开(公告)日：2024-08-15
申请号：US18022550
申请日：2021-12-02
Applicant: PSK INC.
Inventor： Kwang Sung YOO , Ju Young PARK
IPC: H01J37/32
CPC classification number: H01J37/32568 , H01J37/3244 , H01J37/32513 , H01J37/32715 , H01J37/32743 , H01J2237/2005 , H01J2237/20235 , H01J2237/334
Abstract: Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a housing defining a treatment space formed by a combination of an upper housing and a lower housing, a gas supply unit configured to supply gas to the treatment space, a support unit including a chuck configured to support the substrate in the treatment space and an upper electrode provided to surround the check when viewed from a top view, a dielectric plate unit including a dielectric plate arranged to oppose the substrate supported by the support unit in the treatment space, and an upper electrode unit coupled to the dielectric plate unit and including an upper electrode arranged to oppose the lower electrode, in which the upper electrode unit is coupled to the lower housing.
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公开(公告)号：US20240194445A1
公开(公告)日：2024-06-13
申请号：US18284657
申请日：2021-12-16
Applicant: PSK INC.
Inventor： Chi Young LEE , A Ram KIM , Soo Yeong YANG , Young Tak YOON , Yun Young LEE , Jin Chul SON
IPC: H01J37/32
CPC classification number: H01J37/321 , H01J37/3244 , H01J37/32798 , H01J2237/3323
Abstract: Provided is an apparatus for processing a substrate, the apparatus including: a chamber having a processing space; a support unit for supporting a substrate in the processing space; a gas supply unit for supplying process gas to the processing space; and a plasma generation unit for generating plasma from the process gas, in which the plasma generation unit includes: an inner coil part including a plurality of inner coils; an outer coil part provided to surround the inner coil part when viewed from above and including a plurality of outer coils; an upper power source for applying power to the inner coil part and the outer coil part, and a ground plate disposed above the inner coil part and the outer coil part and grounding the inner coil part and the outer coil part.
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公开(公告)号：US20240079216A1
公开(公告)日：2024-03-07
申请号：US18462379
申请日：2023-09-06
Applicant: PSK INC.
Inventor： KWANG SUNG YOO , JONG CHAN LEE , TAE HOON KANG
IPC: H01J37/32
CPC classification number: H01J37/32697 , H01J37/32568 , H01J37/32577 , H01J2237/334
Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support plate for supporting a substrate and applying a power; a plasma control unit placed above the support plate to face the support plate; and a top electrode unit positioned to surround the plasma control unit, and wherein the plasma control unit includes: a dielectric plate positioned to face a top surface of a substrate mounted on the support plate; and a metal plate positioned above the dielectric plate, and the metal plate is electrically connected to the top electrode unit.
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公开(公告)号：US11862434B2
公开(公告)日：2024-01-02
申请号：US17117720
申请日：2020-12-10
Applicant: PSK INC.
Inventor： Young Jae Ma , Sung Jin Yoon , Hyo Jeong Seo , Jong Woo Park
CPC classification number: H01J37/32477 , H01J37/321 , H01J37/3222 , C23C4/04
Abstract: Embodiments of the inventive concept provide a substrate processing apparatus. The substrate treating apparatus comprises a process treating unit providing a treating space performed treating the substrate; a plasma generating unit generating the plasma discharging a process gas, and supplying the plasma to the treating space. The plasma generating unit provides a plasma chamber having a generating space of the plasma; an antenna wound to surround the plasma chamber outside the plasma chamber; a first coating film covering inside walls of the plasma chamber and comprising yttrium fluoride (YF3).
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公开(公告)号：US11817291B2
公开(公告)日：2023-11-14
申请号：US17321126
申请日：2021-05-14
Applicant: PSK INC.
Inventor： Mu-Kyeom Mun
CPC classification number: H01J37/165 , H01J37/321
Abstract: The inventive concept relates to an apparatus for processing a substrate. In an embodiment, the apparatus for processing the substrate includes a plasma chamber, a coil electrode installed around the plasma chamber, and a Faraday shield provided between the coil electrode and the plasma chamber. The Faraday shield includes a cutout having a plurality of slots formed in a vertical direction along a periphery of the plasma chamber, an upper rim provided at the top of the cutout, and a lower rim provided at the bottom of the cutout. The upper rim and the lower rim have a thermal expansion reduction means configured to reduce a difference in thermal deformation between the upper and the lower rim and the cutout.
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Patent Agency Ranking
公开(公告)号：US20220230839A1
公开(公告)日：2022-07-21
申请号：US17321126
申请日：2021-05-14
Applicant: PSK INC.
Inventor： Mu-Kyeom MUN
Abstract: The inventive concept relates to an apparatus for processing a substrate. In an embodiment, the apparatus for processing the substrate includes a plasma chamber, a coil electrode installed around the plasma chamber, and a Faraday shield provided between the coil electrode and the plasma chamber. The Faraday shield includes a cutout having a plurality of slots formed in a vertical direction along a periphery of the plasma chamber, an upper rim provided at the top of the cutout, and a lower rim provided at the bottom of the cutout. The upper rim and the lower rim have a thermal expansion reduction means configured to reduce a difference in thermal deformation between the upper and the lower rim and the cutout.
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公开(公告)号：US20210305015A1
公开(公告)日：2021-09-30
申请号：US17213065
申请日：2021-03-25
Applicant: PSK INC.
Inventor： KWANG-BO SIM , JI-HOON YOON , DONG-WHEE SHIN , HYUN-WOO OH , KA-RAM KANG
Abstract: Disclosed herein is an apparatus for processing a substrate. The apparatus comprises: a process processing unit for providing a processing space in which a substrate processing is performed; a plasma generation unit for generating plasma, wherein the plasma generation unit comprises: a plasma chamber having a plasma generation space; a gas supply unit for supplying a processing gas to the plasma generation space; a power application unit for generating plasma by exiting the processing gas in the plasma generation space; a diffusion chamber disposed below the plasma chamber and having a diffusion space for diffusing the plasma generated in the plasma generation space and/or the processing gas supplied to the plasma generation space to be uniformly delivered to the processing space, wherein at least one perforated diffusion plate may be disposed in the diffusion space.
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公开(公告)号：US20190051498A1
公开(公告)日：2019-02-14
申请号：US15682858
申请日：2017-08-22
Applicant: PSK INC.
Inventor： Aram KIM
IPC: H01J37/32
CPC classification number: H01J37/32339 , H01J37/32715 , H01J2237/334 , H01L21/67069 , H01L21/67103
Abstract: Disclosed are a substrate treating apparatus, a substrate treating method, and a plasma generating unit. The substrate treating apparatus includes a housing configured to provide a treatment space, in which a substrate is treated, a support unit configured to support a substrate in the treatment space, a plasma generating unit disposed outside the housing and configured to excite plasma from a gas and supply the excited plasma to the treatment space, and a controller, wherein the plasma generating unit includes a plasma generating chamber having a space, into which a gas is introduced, a first antenna wound to surround the plasma generating chamber and connected to a power source through an electric wire, a second antenna wound around the plasma generating chamber and connected to the power source through an auxiliary electric wire, and a switch configured to switch on and off the auxiliary electric wire.
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公开(公告)号：US09995402B2
公开(公告)日：2018-06-12
申请号：US15230640
申请日：2016-08-08
Applicant: PRESYS.CO.,LTD , PSK INC.
Inventor： Bae-Jin Kim , Ki Sun Choi , Kang Hyun Kim , Sang Min Kim , Sun Yeol Seo
CPC classification number: F16K3/184 , F16K3/0218 , F16K3/0281 , F16K3/029 , F16K3/182 , F16K3/314 , F16K3/3165 , F16K51/02
Abstract: Disclosed herein is an upper housing 100 having openings that are respectively defined in a front surface and a rear surface thereof and in which first and second moving paths 110 and 120 are defined; a first blade 200 installed in the upper housing 100 to move upward from a lower side, thereby opening/closing the first moving path 110; a first shaft 300 coupled to a lower portion of the first blade 200; a lower housing 400 disposed below the upper housing 100, in which a rotation guide groove 410 for guiding rotation of a L-motion block 500 at a fixed position while the first blade 200 moves in a close direction C is defined in each of both inner surfaces of the lower housing (400).
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公开(公告)号：US09779918B2
公开(公告)日：2017-10-03
申请号：US14542891
申请日：2014-11-17
Applicant: PSK INC.
Inventor： Chang Weon Lee
IPC: C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/44 , C23C16/458
CPC classification number: H01J37/32834 , C23C16/4412 , C23C16/4585 , H01J37/32091
Abstract: Provided is a substrate processing apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, a plasma generation unit, a gas supplying unit, an exhaust adjusting unit, or the like. Residual gas and reaction by-products are generated in a chamber after a substrate is treated by using a gas supplied from the gas supplying unit or plasma excited by the plasma generation unit. The gas exhaust adjusting unit adjusts discharge amounts of residual gas and reaction by-products to adjust residence time or pressure of gas, plasma, or the like in the apparatus, thereby controlling a uniformity of the substrate treating process.
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