公开(公告)号：US12049710B2

公开(公告)日：2024-07-30

申请号：US18209840

申请日：2023-06-14

申请人： Panasonic Holdings Corporation

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi ,  Yoshio Okayama

IPC分类号： C30B29/40 ,  C30B25/02 ,  C30B33/08

CPC分类号： C30B29/406 ,  C30B33/08 ,  C30B25/02

摘要： A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

公开(公告)号：US11753739B2

公开(公告)日：2023-09-12

申请号：US17479516

申请日：2021-09-20

申请人： OSAKA UNIVERSITY ,  PANASONIC HOLDINGS CORPORATION

发明人： Yusuke Mori ,  Masashi Yoshimura ,  Masayuki Imanishi ,  Akira Kitamoto ,  Junichi Takino ,  Tomoaki Sumi

IPC分类号： C30B25/16 ,  C30B29/40

CPC分类号： C30B25/165 ,  C30B29/403

摘要： A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.