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公开(公告)号：US11879184B2
公开(公告)日：2024-01-23
申请号：US17848927
申请日：2022-06-24
发明人： Yusuke Mori , Masashi Yoshimura , Masayuki Imanishi , Shigeyoshi Usami , Junichi Takino , Masayuki Hoteida , Shunichi Matsuno
CPC分类号： C30B25/165 , C23C16/303 , C23C16/45561 , C30B25/14 , C30B29/406 , C30B35/00
摘要： A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by “θ”, wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first carrier gas into the nurturing chamber is denoted by “L1”, wherein a distance between the forward end of the first carrier gas supply inlet and the forward end of the group-III element oxide gas supply inlet is denoted by “M1”, wherein a diameter of the seed substrate is denoted by “k”, and wherein following Eqs. (1) to (4), 0°
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公开(公告)号：US12049710B2
公开(公告)日：2024-07-30
申请号：US18209840
申请日：2023-06-14
发明人： Yusuke Mori , Masashi Yoshimura , Masayuki Imanishi , Akira Kitamoto , Junichi Takino , Tomoaki Sumi , Yoshio Okayama
CPC分类号： C30B29/406 , C30B33/08 , C30B25/02
摘要： A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.
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公开(公告)号：US11859311B2
公开(公告)日：2024-01-02
申请号：US17846768
申请日：2022-06-22
发明人： Yusuke Mori , Masashi Yoshimura , Masayuki Imanishi , Shigeyoshi Usami , Junichi Takino , Shunichi Matsuno
CPC分类号： C30B29/403 , C30B23/002 , C30B23/063 , C30B25/165
摘要： A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y
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公开(公告)号：US11753739B2
公开(公告)日：2023-09-12
申请号：US17479516
申请日：2021-09-20
发明人： Yusuke Mori , Masashi Yoshimura , Masayuki Imanishi , Akira Kitamoto , Junichi Takino , Tomoaki Sumi
CPC分类号： C30B25/165 , C30B29/403
摘要： A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (Po/Pe) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Po is a supply partial pressure of the group-III element oxide gas, and the Pe is an equilibrium partial pressure of the group-III element oxide gas.
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