Patent search ap:("Panasonic Intellectual Property Management Co. Page Ltd.") AND inv:"Asami NISHIKAWA"

1.

发明申请
INTERCONNECT STRUCTURE, SEMICONDUCTOR DEVICE, METHOD OF OPERATING ACTIVE ELEMENT, METHOD OF MANUFACTURING INTERCONNECT STRUCTURE, METHOD OF USING INTERCONNECT STRUCTURE, METHOD OF CONTROLLING INTERCONNECT RESISTANCE OF INTERCONNECT STRUCTURE, METHOD OF EVALUATING INTERCONNECT STRUCTURE, METHOD OF EVALUATING DEVICE, METHOD OF DRIVING DEVICE, AND EVALUATION DEVICE 有权

公开(公告)号：US20210050513A1

公开(公告)日：2021-02-18

申请号：US17007382

申请日：2020-08-31

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Asami NISHIKAWA , Satoshi SHIBATA , Yu NISHITANI , Tetsuya ASANO , Takuji TSUJITA , Yuta SUGIMOTO

IPC: H01L45/00 , H01L27/24 , G01R27/14

Abstract: An interconnect structure according to the present disclosure includes: an interconnect layer containing a metal element as a main component and extending in a direction; a metal layer opposite to the interconnect layer, and a solid electrolyte layer between the interconnect layer and the metal layer. The solid electrolyte layer encloses the interconnect layer at least in a cross-sectional view taken along a plane orthogonal to the direction. The interconnect layer and the metal layer are electrically insulated from each other by the solid electrolyte layer.

2.

发明申请
INTERCONNECT STRUCTURE, SEMICONDUCTOR DEVICE, METHOD OF OPERATING ACTIVE ELEMENT, METHOD OF MANUFACTURING INTERCONNECT STRUCTURE, METHOD OF USING INTERCONNECT STRUCTURE, METHOD OF CONTROLLING INTERCONNECT RESISTANCE OF INTERCONNECT STRUCTURE, METHOD OF EVALUATING INTERCONNECT STRUCTURE, METHOD OF EVALUATING DEVICE, METHOD OF DRIVING DEVICE, AND EVALUATION DEVICE 有权

公开(公告)号：US20250089580A1

公开(公告)日：2025-03-13

申请号：US18954969

申请日：2024-11-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Asami NISHIKAWA , Satoshi SHIBATA , Yu NISHITANI , Tetsuya ASANO , Takuji TSUJITA , Yuta SUGIMOTO

IPC: H10N70/20 , G01R27/14 , H10B63/00 , H10N70/00

Abstract: An interconnect structure includes: an interconnect layer containing a metal element as a main component and extending in a direction; a metal layer opposite to the interconnect layer, and a solid electrolyte layer between the interconnect layer and the metal layer. The solid electrolyte layer encloses the interconnect layer at least in a cross-sectional view taken along a plane orthogonal to the direction. The interconnect layer and the metal layer are electrically insulated from each other by the solid electrolyte layer.

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