公开(公告)号：US20190319153A1

公开(公告)日：2019-10-17

申请号：US16447737

申请日：2019-06-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Daiki WATANABE ,  Hiroyuki YAMADA ,  Minato SENO ,  Akinori TSURUTA

IPC: H01L31/0747 ,  H01L31/0224 ,  H01L31/18

Abstract: An i-type layer is formed on a side of one surface of a crystalline semiconductor substrate. An n-type layer or a p-type layer is formed on the i-type layer and includes a conductive impurity. A TCO is formed on the n-type layer or the p-type layer. A density in a proximate portion of the n-type layer or the p-type layer closer to the TCO than a remote portion of the n-type layer or the p-type layer is smaller than a density in the remote portion.