公开(公告)号：US20190229029A1

公开(公告)日：2019-07-25

申请号：US16245168

申请日：2019-01-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HIDEKI NIIMI ,  TATSUO SASAOKA

IPC: H01L23/367 ,  H01L23/498 ,  H01L23/00

Abstract: A semiconductor device with small variations in high frequency characteristics by suppressing variations in impedance while maintaining high heat radiation is provided. The semiconductor device including a semiconductor package having two terminals, a wiring board having an opening at which the semiconductor package is positioned and having two electrodes connected to the two terminals and a heat sink fixing the semiconductor package in which a center of the semiconductor package is decentered with respect to a center of the opening is used. Also, the semiconductor device in which a center of the two electrodes is decentered from a center of the opening is used.