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公开(公告)号:US10186479B2
公开(公告)日:2019-01-22
申请号:US15426142
申请日:2017-02-07
Inventor: Hidenori Katsumura , Shinya Tokunaga , Masaya Sumita , Hiroyoshi Yoshida , Yasuhiro Sugaya , Kazuhide Uriu , Osamu Shibata
IPC: H01L23/495 , H01L25/00 , B60R11/04 , H01L23/31 , H01L23/498 , H01L23/64 , H01L23/00 , H01L49/02 , H04N5/225 , H01L23/48 , H01L23/367
Abstract: A semiconductor device includes a metal plate capacitor that includes a heat-resistant metal plate and a capacitor unit including a sintered dielectric formed on at least one surface of the heat-resistant metal plate, a semiconductor chip disposed on the metal plate capacitor, a connector configured to electrically connect the semiconductor chip and the metal plate capacitor, and a protector configured to protect the semiconductor chip, the metal plate capacitor, and the connector.