公开(公告)号：US20190035832A1

公开(公告)日：2019-01-31

申请号：US16034328

申请日：2018-07-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KYOSUKE KOBINATA ,  SANSHIRO SHISHIDO ,  YOSHIHIRO SATO

IPC: H01L27/146 ,  H01L31/0224

CPC classification number: H01L27/14605 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14665 ,  H01L31/022408 ,  H04N5/353 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378

Abstract: An imaging device includes: a semiconductor substrate; a first pixel including: a first photoelectric converter above the semiconductor substrate, including first and second electrodes and a first photoelectric conversion layer between the first and second electrodes, configured to convert incident light into first charge; and a first charge accumulation region in the semiconductor substrate, electrically connected to the second electrode; and a second pixel including a second photoelectric converter above the semiconductor substrate, including third and fourth electrodes and a second photoelectric conversion layer between the third and fourth electrodes, configured to convert incident light into second charge; and a second charge accumulation region in the semiconductor substrate, electrically connected to the fourth electrode. An area of the second electrode is greater than an area of the fourth electrode, and both the first charge accumulation region and the second charge accumulation region overlap with the second electrode in plan view.