公开(公告)号：US09618412B2

公开(公告)日：2017-04-11

申请号：US14913158

申请日：2014-08-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kazushi Kataoka ,  Jun Ogihara ,  Naoki Ushiyama ,  Hisanori Shiroishi

IPC: G01L9/00 ,  B81B7/00 ,  B81B3/00

CPC classification number: G01L9/0072 ,  B81B3/00 ,  B81B7/0029

Abstract: A semiconductor physical quantity sensor includes: a first base material; an electrode formed on the first base material; a diaphragm which bends in accordance with a physical quantity applied from the outside; a second base material fixed to the first base material and supporting the diaphragm such that the diaphragm is opposed to the electrode with a space (S) in between; and an insulator formed on a surface on the first base material side of the diaphragm. Moreover, a wall portion to define the space (S) is formed between the insulator and the electrode.