公开(公告)号：US10119865B2

公开(公告)日：2018-11-06

申请号：US14895927

申请日：2014-05-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsumi Kakimoto ,  Masaaki Saito ,  Yosuke Hagihara ,  Takafumi Okudo ,  Yoichi Nishijima ,  Ryo Osabe ,  Naoki Ushiyama ,  Sumio Akai ,  Yasufumi Shibata

IPC: G01J5/08 ,  G01J5/04 ,  G01J5/02 ,  G01J5/00 ,  G01J5/20 ,  G01J5/10

Abstract: An infrared sensor, which achieves a low manufacturing cost, or has high sensitivity, or in which an increase in heat capacity is reduced, is provided. The infrared sensor includes a first infrared absorbing portion, an infrared sensing portion for sensing infrared rays based on infrared rays absorbed by the first infrared absorbing portion, and a plurality of protrusions including metal and disposed apart from each other on a surface of the first infrared absorbing portion. Since an absorption rate of infrared rays is improved, sensitivity can be improved, or an increase in heat capacity can be reduced.

公开(公告)号：US09618412B2

公开(公告)日：2017-04-11

申请号：US14913158

申请日：2014-08-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kazushi Kataoka ,  Jun Ogihara ,  Naoki Ushiyama ,  Hisanori Shiroishi

IPC: G01L9/00 ,  B81B7/00 ,  B81B3/00

CPC classification number: G01L9/0072 ,  B81B3/00 ,  B81B7/0029

Abstract: A semiconductor physical quantity sensor includes: a first base material; an electrode formed on the first base material; a diaphragm which bends in accordance with a physical quantity applied from the outside; a second base material fixed to the first base material and supporting the diaphragm such that the diaphragm is opposed to the electrode with a space (S) in between; and an insulator formed on a surface on the first base material side of the diaphragm. Moreover, a wall portion to define the space (S) is formed between the insulator and the electrode.

公开(公告)号：US11156520B2

公开(公告)日：2021-10-26

申请号：US16671738

申请日：2019-11-01

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Hisanori Siroisi ,  Jun Ogihara ,  Naoki Ushiyama

IPC: G01L9/00

Abstract: A physical quantity sensor includes a first substrate, an electrode provided on the first substrate, a diaphragm made of semiconductor material, a second substrate fixed to the first substrate, a dielectric film provided on the diaphragm, and a wall provided between the dielectric film and the electrode. The second substrate supports the diaphragm such that the diaphragm has an opposing surface facing the electrode across a space. The dielectric film is provided on the opposing surface of the diaphragm. The dielectric film has a surface facing the electrode across the space. The wall includes a first protrusion and a second protrusion. The first protrusion protrudes toward the electrode from the surface of the dielectric film. The second protrusion protrudes toward the electrode from the first protrusion, and contacts the electrode. The second protrusion is made of material which is different from material of the dielectric film.