公开(公告)号：US11283233B2

公开(公告)日：2022-03-22

申请号：US16777707

申请日：2020-01-30

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hitoshi Sato ,  Kazuya Yamada ,  Hiroki Nagai

IPC: H01S5/02 ,  H01S5/028 ,  H01S5/22 ,  H01S5/343 ,  H01L33/00 ,  H01L33/16 ,  H01L33/44 ,  B28D5/00 ,  H01S5/042 ,  H01S5/32 ,  H01L21/3065 ,  H01L33/30

Abstract: A method of fabricating a semiconductor light-emitting device includes: (a) forming a semiconductor layer including a light-emitting layer on the first surface of a substrate; (b) forming a first trench and a second trench in the semiconductor layer, the first trench extending in a first direction that is parallel to a principal plane of the substrate, and the second trench being disposed inside and parallel to the first trench; (c) forming a third trench parallel to the first trench in the second surface of the substrate opposite to the first surface of the substrate; and (d) forming a semiconductor light-emitting device by dividing the substrate. In (d), an end of at least one divided side of the semiconductor light-emitting device is in the second trench. The first trench has a first width, and the second trench has a second width. The second width is less than the first width.