公开(公告)号：US11366022B2

公开(公告)日：2022-06-21

申请号：US16689135

申请日：2019-11-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Atsushi Ohoka ,  Masahiko Niwayama ,  Masao Uchida

IPC: G01K7/01 ,  H01L27/02 ,  H01L29/16

Abstract: A semiconductor device is provided that includes a temperature sensing function that accurately senses a temperature. The semiconductor device includes a first semiconductor layer on a semiconductor substrate, and a temperature sensor. The temperature sensor includes: a sensing-body region of a second conductivity type that is disposed in the first semiconductor layer; a first region of a first conductivity type, and a second region of the first conductivity type that are arranged in the sensing-body region and are apart from each other; and a third region of the second conductivity type that is in the sensing-body region and is between the first region and the second region. A concentration of a first conductivity type impurity in the temperature-sensing conductive layer is higher than a concentration of a first conductivity type impurity in the drift region.