DRIVE DEVICE
    1.
    发明申请
    DRIVE DEVICE 有权
    驱动装置

    公开(公告)号:US20160112040A1

    公开(公告)日:2016-04-21

    申请号:US14830717

    申请日:2015-08-19

    CPC classification number: H03K17/223 H03K17/162 H03K17/691

    Abstract: A drive device that drives a semiconductor switching device includes a capacitor, an output selection unit that selects whether or not to supply a charge of the capacitor to a conduction control terminal of the semiconductor switching device, and a charge consumption unit that supplies the charge of the capacitor to a portion other than the conduction control terminal, thereby consuming the charge of the capacitor.

    Abstract translation: 驱动半导体开关器件的驱动装置包括:电容器,选择是否向半导体开关器件的导通控制端子提供电容器的电荷的输出选择部;以及电荷消耗部, 电容器到导通控制端子之外的部分,从而消耗电容器的电荷。

    ELECTROMAGNETIC RESONANCE COUPLER AND TRANSMISSION APPARATUS
    2.
    发明申请
    ELECTROMAGNETIC RESONANCE COUPLER AND TRANSMISSION APPARATUS 有权
    电磁谐振耦合器和传输装置

    公开(公告)号:US20150295599A1

    公开(公告)日:2015-10-15

    申请号:US14676816

    申请日:2015-04-02

    CPC classification number: H04B1/0475 H01P1/20345 H01P5/028 H01P7/084

    Abstract: An electromagnetic resonance coupler according to one aspect of the present disclosure includes a first layer, a second layer which faces a first principal surface of the first layer, a third layer which faces a second principal surface of the first layer, a first resonator which is located between the first layer and the second layer, and a second resonator which is located between the first layer and the third layer. A dielectric constant of the first layer is lower than either one of a dielectric constant of the second layer and a dielectric constant of the third layer. A dielectric dissipation factor of the first layer is higher than either one of a dielectric dissipation factor of the second layer and a dielectric dissipation factor of the third layer.

    Abstract translation: 根据本公开的一个方面的电磁谐振耦合器包括第一层,面向第一层的第一主表面的第二层,面向第一层的第二主表面的第三层,第一层是第一层, 位于第一层和第二层之间,第二谐振器位于第一层和第三层之间。 第一层的介电常数低于第二层的介电常数和第三层的介电常数中的任何一个。 第一层的介电耗散因子高于第二层的介电损耗因子和第三层的介电损耗因子中的任一个。

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