公开(公告)号：US09865679B2

公开(公告)日：2018-01-09

申请号：US14880975

申请日：2015-10-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hideki Mizuhara ,  Yoshihiro Matsushima ,  Shinichi Oohashi

IPC: H01L29/06 ,  H01L23/29 ,  H01L23/31 ,  H01L21/78 ,  H01L21/268 ,  B23K26/361

CPC classification number: H01L29/0657 ,  B23K26/361 ,  H01L21/268 ,  H01L21/78 ,  H01L23/293 ,  H01L23/3142 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a semiconductor element having a compound semiconductor layer epitaxially grown on a silicon substrate, an object is to suppress generation of deficiency or problems of reliability deriving from the ends of the element that are generated when dividing into semiconductor devices by dicing. A compound semiconductor layer epitaxially grown on a silicon substrate is formed via a buffer layer made of aluminum nitride. In the periphery of the semiconductor device, a scribe lane is present to surround a semiconductor element region. Along the scribe lane, the aluminum nitride layer is covered with a coating film for protection against humidity and moisture.

公开(公告)号：US10553676B2

公开(公告)日：2020-02-04

申请号：US16245125

申请日：2019-01-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hideki Mizuhara ,  Yoshihiro Matsushima ,  Shinichi Oohashi

IPC: H01L23/29 ,  H01L23/31 ,  H01L29/06 ,  H01L21/78 ,  B23K26/361 ,  H01L21/268

Abstract: In a semiconductor element having a compound semiconductor layer epitaxially grown on a silicon substrate, an object is to suppress generation of deficiency or problems of reliability deriving from the ends of the element that are generated when dividing into semiconductor devices by dicing. A compound semiconductor layer epitaxially grown on a silicon substrate is formed via a buffer layer made of aluminum nitride. In the periphery of the semiconductor device, a scribe lane is present to surround a semiconductor element region. Along the scribe lane, the aluminum nitride layer is covered with a coating film for protection against humidity and moisture.

公开(公告)号：US10224397B2

公开(公告)日：2019-03-05

申请号：US15823245

申请日：2017-11-27

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Hideki Mizuhara ,  Yoshihiro Matsushima ,  Shinichi Oohashi

IPC: H01L29/06 ,  H01L21/268 ,  H01L21/78 ,  H01L23/29 ,  H01L23/31 ,  B23K26/361

Abstract: In a semiconductor element having a compound semiconductor layer epitaxially grown on a silicon substrate, an object is to suppress generation of deficiency or problems of reliability deriving from the ends of the element that are generated when dividing into semiconductor devices by dicing. A compound semiconductor layer epitaxially grown on a silicon substrate is formed via a buffer layer made of aluminum nitride. In the periphery of the semiconductor device, a scribe lane is present to surround a semiconductor element region. Along the scribe lane, the aluminum nitride layer is covered with a coating film for protection against humidity and moisture.