公开(公告)号：US20180083004A1

公开(公告)日：2018-03-22

申请号：US15698019

申请日：2017-09-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO ,  RYOTA SAKAIDA ,  SATOSHI SHIBATA ,  TAIJI NODA

IPC: H01L27/092 ,  H01L27/146

CPC classification number: H01L27/0922 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14643

Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.

公开(公告)号：US20240153972A1

公开(公告)日：2024-05-09

申请号：US18542603

申请日：2023-12-16

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAIJI NODA

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14683

Abstract: An imaging device includes a pixel region and a first peripheral region. The pixel region includes a pixel substrate portion and a pixel transistor. The pixel transistor is positioned in the pixel substrate portion. The first peripheral region includes a first peripheral substrate portion and at least one first peripheral transistor. The at least one first peripheral transistor is positioned in the first peripheral substrate portion. Signals are communicated between the pixel region and the first peripheral region. The at least one first peripheral transistor includes a first specific layer. The first specific layer is positioned in the first peripheral substrate portion. The first specific layer contains a heavy conductive impurity that is a p-type impurity having an atomic number greater than or equal to that of gallium or that is an n-type impurity having an atomic number greater than or equal to that of arsenic.

公开(公告)号：US20240347564A1

公开(公告)日：2024-10-17

申请号：US18754254

申请日：2024-06-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAIJI NODA

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14614 ,  H01L27/14645

Abstract: An imaging device includes a pixel region and a first peripheral region. The pixel region includes a pixel substrate portion and a pixel transistor located in the pixel substrate portion. The first peripheral region includes a first peripheral substrate portion and at least one first peripheral transistor located in the first peripheral substrate portion. Signals are transmitted between the first peripheral region and the pixel region. A gate length of the at least one first peripheral transistor is less than a gate length of the pixel transistor. The at least one first peripheral transistor further includes, in the first peripheral substrate portion, a first source, a first drain, a first channel region located between the first source and the first drain, and a first strain-introducing layer that brings a strain to the first channel region.

公开(公告)号：US20220344394A1

公开(公告)日：2022-10-27

申请号：US17811319

申请日：2022-07-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAIJI NODA

IPC: H01L27/146

Abstract: An imaging device includes a pixel region including an amplifying transistor that includes a first gate and that outputs a signal voltage corresponding to an amount of signal charge, a first peripheral region including at least one first peripheral transistor including a second gate, the first peripheral region being located outside the pixel region, and a semiconductor substrate provided with the amplifying transistor and the at least one first peripheral transistor. A gate length of the second gate is shorter than a gate length of the first gate. When at least one type of impurity that contributes to suppression of transient enhanced diffusion of a conductive impurity is defined as a first specific species, the at least one first peripheral transistor includes a first specific layer located in the semiconductor substrate, the first specific layer containing a conductive impurity and the first specific species.

公开(公告)号：US20230422535A1

公开(公告)日：2023-12-28

申请号：US18463332

申请日：2023-09-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAIJI NODA

IPC: H10K39/32

CPC classification number: H10K39/32

Abstract: An imaging device includes a pixel region and a first peripheral region. The pixel region includes a pixel substrate portion and an amplifying transistor that outputs a signal voltage corresponding to an amount of signal charge. The amplifying transistor is located in the pixel substrate portion. The first peripheral region includes a first peripheral substrate portion and a first peripheral transistor. The first peripheral transistor is located in the first peripheral substrate portion. The pixel substrate portion and the first peripheral substrate portion are stacked on each other. At least one type of impurity that contributes to inhibition of transient enhanced diffusion of a conductive impurity is defined as a specific species. The first peripheral transistor includes a first specific layer that is located in the first peripheral substrate portion and that contains the conductive impurity and the specific species.

公开(公告)号：US20220014700A1

公开(公告)日：2022-01-13

申请号：US17483655

申请日：2021-09-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKAYOSHI YAMADA ,  YOSHIHIRO SATO ,  TAIJI NODA

IPC: H04N5/378 ,  H01L27/146

Abstract: An imaging device includes a semiconductor substrate and pixels, which includes a first pixel and second pixels adjacent thereto. Each of the pixels includes a first photoelectric conversion layer, a first pixel electrode, a first plug that electrically connects the semiconductor substrate and the first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, and a second plug that electrically connects the semiconductor substrate and the second pixel electrode. In the first pixel and the plurality of second pixels, a distance between the closest plugs of the first plugs and the second plugs is larger than or equal to one-half of a pixel pitch, when viewed in a normal direction of the semiconductor substrate.