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公开(公告)号：US20170163917A1
公开(公告)日：2017-06-08
申请号：US15351075
申请日：2016-11-14
IPC分类号： H04N5/355 , H01L27/146 , H04N5/357
CPC分类号： H04N5/35563 , H01L27/14603 , H04N5/23245 , H04N5/357 , H04N5/3696 , H04N5/3698
摘要： An imaging device according to the present disclosure includes: a counter electrode; a first pixel electrode facing the counter electrode; a second pixel electrode facing the counter electrode; a third pixel electrode facing the counter electrode; a photoelectric conversion layer sandwiched between the first pixel electrode, the second pixel electrode, and the third pixel electrode, and the counter electrode; a first signal detection circuit electrically connected to the first pixel electrode; a second signal detection circuit electrically connected to the second pixel electrode; a first switching element connected between the third pixel electrode and the first signal detection circuit; and a second switching element connected between the third pixel electrode and the second signal detection circuit.
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公开(公告)号：US20180205896A1
公开(公告)日：2018-07-19
申请号：US15867986
申请日：2018-01-11
发明人： KAZUKO NISHIMURA , SANSHIRO SHISHIDO , HIDENARI KANEHARA , TAKAYOSHI YAMADA , MASASHI MURAKAMI , YASUNORI INOUE
CPC分类号： H04N5/35518 , H01L27/14643 , H01L27/14665 , H01L29/42372 , H04N5/355 , H04N5/35563 , H04N5/363 , H04N5/378
摘要： An imaging device includes: a first imaging cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal processing circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second imaging cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal processing circuit that is electrically connected to the second photoelectric converter and detects the second signal. Sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell. The first signal processing circuit has a circuit configuration different from the second signal processing circuit. An operation frequency of the first signal processing circuit is different from an operation frequency of the second signal processing circuit.
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公开(公告)号：US20160119562A1
公开(公告)日：2016-04-28
申请号：US14876500
申请日：2015-10-06
IPC分类号： H04N5/372 , H04N5/378 , H01L27/146 , H04N5/351
CPC分类号： H01L27/14603 , H01L27/14612 , H01L27/14621 , H01L27/14627 , H01L27/14667 , H01L27/307 , H04N5/353 , H04N5/378
摘要： An imaging device, comprising: at least one unit pixel cell; and a voltage application circuit that generates at least two different voltages, each of the at least one unit pixel cell comprising: a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface, a pixel electrode located on the first surface, an auxiliary electrode located on the first surface, the auxiliary electrode being separated from the pixel electrode and electrically connected to the voltage application circuit, an upper electrode located on the second surface, the upper electrode opposing to the pixel electrode and the auxiliary electrode, a charge storage node electrically connected to the pixel electrode, and a charge detection circuit electrically connected to the charge storage node.
摘要翻译： 一种成像装置，包括：至少一个单位像素单元; 以及电压施加电路，其生成至少两个不同的电压，所述至少一个单位像素单元中的每一个包括：光电转换层，具有第一表面和与所述第一表面相对的一侧的第二表面，位于 位于第一表面上的辅助电极，辅助电极与像素电极分离并电连接到电压施加电路，位于第二表面上的上电极，与像素电极相对的上电极和 辅助电极，电连接到像素电极的电荷存储节点，以及电连接到电荷存储节点的电荷检测电路。
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公开(公告)号：US20240171877A1
公开(公告)日：2024-05-23
申请号：US18346757
申请日：2023-07-03
发明人： JUNJI HIRASE , TAKAYOSHI YAMADA , KAZUKO NISHIMURA
IPC分类号： H04N25/77 , H04N23/667 , H04N25/57 , H04N25/60
CPC分类号： H04N25/77 , H04N23/667 , H04N25/57 , H04N25/60
摘要： An imaging apparatus includes: a photoelectric converter that generates charge through photoelectric conversion; a charge accumulator in which the charge is accumulated; and a metal-oxide-semiconductor capacitor including a first terminal, a second terminal, a gate, an oxide layer, and at least one semiconductor region. During exposure, the first terminal is electrically connected to the charge accumulator. The gate is electrically connected to the first terminal. The at least one semiconductor region is electrically connected to the second terminal. The oxide layer is located between the gate and the at least one semiconductor region.
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公开(公告)号：US20190238768A1
公开(公告)日：2019-08-01
申请号：US16255679
申请日：2019-01-23
发明人： TAKAYOSHI YAMADA , YASUO MIYAKE , MASASHI MURAKAMI
IPC分类号： H04N5/363 , H01L27/146 , H04N5/351 , H04N5/378
CPC分类号： H04N5/363 , H01L27/14612 , H04N5/351 , H04N5/378
摘要： An imaging device according to the present disclosure includes a photoelectric converter that converts light into an electric charge; a transfer transistor; a charge accumulation node coupled to the photoelectric converter via the transfer transistor; a first signal detection transistor having a gate coupled to the charge accumulation node; a first reset transistor one of a source and a drain of which is coupled to the charge accumulation node; and a second reset transistor one of a source and a drain of which is coupled to the photoelectric converter, wherein one of a source and a drain of the first signal detection transistor is coupled to the other of the source and the drain of the first reset transistor and the other of the source and drain of the second reset transistor.
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公开(公告)号：US20230215882A1
公开(公告)日：2023-07-06
申请号：US18183227
申请日：2023-03-14
IPC分类号： H01L27/146
CPC分类号： H01L27/14605 , H01L27/14636 , H01L27/14627
摘要： An imaging device includes a counter electrode, a photoelectric conversion layer that converts light into a signal charge, a plurality of sets of electrodes each of which collects the signal charge, each of the plurality of sets including a first electrode included in a high-sensitivity pixel and a second electrode included in a low-sensitivity pixel, and an auxiliary electrode which is located, as seen in plan view, between the first electrode and the second electrode in each of the plurality of sets and which is commonly included in the high-sensitivity pixel and the low-sensitivity pixel. The distance between the first electrode and the auxiliary electrode is different from the distance between the second electrode and the auxiliary electrode.
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公开(公告)号：US20220208811A1
公开(公告)日：2022-06-30
申请号：US17695747
申请日：2022-03-15
发明人： YOSHIHIRO SATO , TAKAYOSHI YAMADA
IPC分类号： H01L27/146 , H01L27/30 , H04N5/3745 , H04N5/369
摘要： An imaging device includes a pixel. The pixel includes a charge accumulator containing an impurity of a first conductivity type, a first transistor, a second transistor, a first well region containing an impurity of a second conductivity type, and a second well region containing an impurity of the first conductivity type. The charge accumulator accumulates charge generated through photoelectric conversion. The first transistor includes a first gate electrode and a first diffusion region containing an impurity of the first conductivity type. The second transistor includes a second gate electrode and a second diffusion region containing an impurity of the second conductivity type. The first transistor and the charge accumulator are located in the first well region, and the second transistor is located in the second well region. A distance between the charge accumulator and the second transistor is larger than a distance between the charge accumulator and the first transistor.
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公开(公告)号：US20220014700A1
公开(公告)日：2022-01-13
申请号：US17483655
申请日：2021-09-23
发明人： TAKAYOSHI YAMADA , YOSHIHIRO SATO , TAIJI NODA
IPC分类号： H04N5/378 , H01L27/146
摘要： An imaging device includes a semiconductor substrate and pixels, which includes a first pixel and second pixels adjacent thereto. Each of the pixels includes a first photoelectric conversion layer, a first pixel electrode, a first plug that electrically connects the semiconductor substrate and the first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, and a second plug that electrically connects the semiconductor substrate and the second pixel electrode. In the first pixel and the plurality of second pixels, a distance between the closest plugs of the first plugs and the second plugs is larger than or equal to one-half of a pixel pitch, when viewed in a normal direction of the semiconductor substrate.
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公开(公告)号：US20230223411A1
公开(公告)日：2023-07-13
申请号：US18174601
申请日：2023-02-24
发明人： TAKAYOSHI YAMADA , YOSHIHIRO SATO
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14643 , H01L27/14636 , H01L27/1463
摘要： An imaging apparatus includes a pixel region including a first substrate section and pixels, and a peripheral region including a second substrate section and no pixels. Each of the pixels includes a first electrode; a second electrode; a photoelectric conversion layer that is disposed between the first electrode and the second electrode; and a charge accumulation region disposed in the first substrate section. The pixel region includes first penetrating electrodes that electrically connect the first electrode to the charge accumulation region. The peripheral region includes second penetrating electrodes. An areal density of the first penetrating electrodes that is a ratio of an area of the first penetrating electrodes to an area of the pixel region is different from an areal density of the second penetrating electrodes that is a ratio of an area of the second penetrating electrodes to an area of the peripheral region.
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公开(公告)号：US20170214871A1
公开(公告)日：2017-07-27
申请号：US15406824
申请日：2017-01-16
IPC分类号： H04N5/355 , H04N5/3745 , H04N5/376 , H04N5/369
CPC分类号： H04N5/35563 , H04N5/3559 , H04N5/3696 , H04N5/374 , H04N5/37452 , H04N5/376
摘要： An imaging device includes a pixel cell including: a first photoelectric converter that generates a first electrical signal; and a first signal detection circuit that detects the first electrical signal. The first signal detection circuit includes: a first transistor one of a source and a drain of which is electrically connected to the first photoelectric converter; a first capacitor having first and second ends, the first end being electrically connected to the other of the source and the drain of the first transistor, a reference voltage being applied to the second end; and a second transistor having a gate electrically connected to the first photoelectric converter. The pixel cell outputs, in one frame period, a first image signal and a second image signal in sequence, the first image signal being output when the first transistor is off, the second image signal being output when the first transistor is on.
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