公开(公告)号：US20150084106A1

公开(公告)日：2015-03-26

申请号：US14555153

申请日：2014-11-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kentaro NAKANISHI ,  Junji HIRASE ,  Kosaku SAEKI ,  Yoshinori TAKAMI ,  Takeshi HIDAKA ,  Tokuhiko TAMAKI

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14689

Abstract: A solid-state imaging device includes unit pixels formed on a semiconductor substrate. Each of the unit pixels includes a photoelectric converter, a floating diffusion, a pinning layer, and a pixel transistor. The pixel transistor includes a gate electrode formed on the semiconductor substrate, a source diffusion layer, and a drain diffusion layer. At least one of the source diffusion layer or the drain diffusion layer functions as the floating diffusion. The pinning layer is covered by the floating diffusion at a bottom and a side at a channel of the pixel transistor. A conductivity type of the floating diffusion is opposite to that of the pinning layer.

Abstract translation: 固态成像装置包括形成在半导体衬底上的单位像素。 每个单位像素包括光电转换器，浮动扩散，钉扎层和像素晶体管。 像素晶体管包括形成在半导体衬底上的栅电极，源极扩散层和漏极扩散层。 源极扩散层或漏极扩散层中的至少一个起到浮动扩散的作用。 钉扎层被像素晶体管的通道的底部和侧面处的浮动扩散覆盖。 浮动扩散的导电类型与钉扎层的导电类型相反。