公开(公告)号：US20150072254A1

公开(公告)日：2015-03-12

申请号：US14391176

申请日：2013-12-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takahiro Suzuki ,  Takaiki Nomura ,  Kazuhito Hato ,  Tatsuo Fujita ,  Satoru Tamura ,  Yoshihiro Kozawa

IPC: H01M8/06 ,  H01M8/10 ,  H01M8/04 ,  C25B1/04 ,  C25B9/18

CPC classification number: H01M8/0656 ,  C25B1/003 ,  C25B1/04 ,  C25B9/18 ,  C25B15/08 ,  H01M8/04089 ,  H01M8/04201 ,  H01M8/10 ,  H01M2008/1095 ,  Y02E60/364 ,  Y02E60/366

Abstract: In a hydrogen producing device, an electrolyte flow path between a plurality of hydrogen producing cells is disposed in a hydrogen production side and in an oxygen production side, separately. Further, an electrolyte flow path is formed through which the electrolyte flows downward from the top between the plurality of hydrogen producing cells, and on the other hand the electrolyte flows upward from the bottom within each hydrogen producing cell. Moreover, a contact point with a produced gas or an atmosphere is provided in a pathway of the electrolyte flow path.

Abstract translation: 在氢制造装置中，分别在氢制造侧和氧制造侧配置多个制氢单元之间的电解液流路。 此外，形成电解质流动路径，电解质通过该电解质流动路径从多个氢产生单元之间的顶部向下流动，另一方面电解质在每个制氢单元内从底部向上流动。 此外，在电解质流路的路径中设置有产生气体或大气的接触点。

公开(公告)号：US10047444B2

公开(公告)日：2018-08-14

申请号：US14810201

申请日：2015-07-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Satoru Tamura ,  Kazuhito Hato ,  Takaiki Nomura ,  Takahiro Kurabuchi ,  Yoshihiro Kozawa ,  Ryousuke Kikuchi

IPC: C25B1/00 ,  C25B1/04 ,  B01J35/00 ,  C25B11/04 ,  B01J37/34 ,  B01J23/20 ,  B01J37/02

Abstract: Provided is a method for generating hydrogen. The method comprising (a) preparing a hydrogen generation device comprising a container, a photo-semiconductor electrode comprising a substrate, a light-blocking first conductive layer, and a first semiconductor photocatalyst layer, a counter electrode, a conductive wire for electrically connecting the first conductive layer to the counter electrode, and a liquid stored in the container, and (b) irradiating the first semiconductor photocatalyst layer with light to generate hydrogen on the counter electrode. The first conductive layer is interposed between the substrate and the first semiconductor photocatalyst layer. At least a part of the first semiconductor photocatalyst layer is in contact with the liquid. At least a part of the counter electrode is in contact with the liquid. The liquid is selected from the group consisting of an electrolyte aqueous solution and water. The substrate is formed of a resin.

公开(公告)号：US09774052B2

公开(公告)日：2017-09-26

申请号：US14391176

申请日：2013-12-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takahiro Suzuki ,  Takaiki Nomura ,  Kazuhito Hato ,  Tatsuo Fujita ,  Satoru Tamura ,  Yoshihiro Kozawa

IPC: C25B1/04 ,  C25B15/08 ,  H01M8/0656 ,  H01M8/10 ,  C25B9/18 ,  H01M8/04089 ,  C25B1/00 ,  H01M8/06 ,  H01M8/04082 ,  H01M8/1018

CPC classification number: H01M8/0656 ,  C25B1/003 ,  C25B1/04 ,  C25B9/18 ,  C25B15/08 ,  H01M8/04089 ,  H01M8/04201 ,  H01M8/10 ,  H01M2008/1095 ,  Y02E60/364 ,  Y02E60/366

Abstract: In a hydrogen producing device, an electrolyte flow path between a plurality of hydrogen producing cells is disposed in a hydrogen production side and in an oxygen production side, separately. Further, an electrolyte flow path is formed through which the electrolyte flows downward from the top between the plurality of hydrogen producing cells, and on the other hand the electrolyte flows upward from the bottom within each hydrogen producing cell. Moreover, a contact point with a produced gas or an atmosphere is provided in a pathway of the electrolyte flow path.

公开(公告)号：US09644276B2

公开(公告)日：2017-05-09

申请号：US14509361

申请日：2014-10-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Satoru Tamura ,  Kazuhito Hato ,  Takaiki Nomura ,  Takahiro Suzuki ,  Yoshihiro Kozawa ,  Ryosuke Kikuchi

IPC: C25B1/04 ,  C25B9/00 ,  C25B11/04 ,  H01L31/0687 ,  C25B1/00 ,  H01M8/0656 ,  H01M8/04082

CPC classification number: C25B1/003 ,  C25B1/04 ,  C25B11/0452 ,  C25B11/0478 ,  H01M8/04201 ,  H01M8/0656 ,  Y02E60/368 ,  Y02P20/135

Abstract: Provided is a semiconductor photoelectrode comprising a first conductive layer; a first n-type semiconductor layer disposed on the first conductive layer; and a second conductive layer covering the first n-type semiconductor layer. The first n-type semiconductor layer has a first n-type surface region and a second n-type surface region. The first n-type surface region is in contact with the first conductive layer. The second n-type surface region is in contact with the second conductive layer. The first n-type semiconductor layer is formed of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. The second conductive layer is light-transmissive. The second conductive layer is formed of a p-type oxide conductor.