公开(公告)号：US4415542A

公开(公告)日：1983-11-15

申请号：US390450

申请日：1982-06-21

申请人： Paul B. Queneau ,  Robert E. Doane ,  Mark H. Berggren ,  Mark W. Cooperrider

发明人： Paul B. Queneau ,  Robert E. Doane ,  Mark H. Berggren ,  Mark W. Cooperrider

IPC分类号： C01G51/00 ,  C01G53/00 ,  C01G53/11 ,  C22B23/00 ,  C23F14/00 ,  C01G49/00

CPC分类号： C01G51/30 ,  C01G53/11 ,  C22B23/0415 ,  C23F14/00

摘要： The scaling of autoclave and leaching-equipment surfaces during the high pressure leaching of nickeliferous oxide and silicate ores is controlled during leaching to favor the formation of scale containing substantial amounts of magnesium sulfate that is more easily removed by chemical dissolution using water or dilute sulfuric acid at temperatures ranging from about 50.degree. C. to 250.degree. C. than scale containing substantial amounts of alunite.

摘要翻译： 在浸出期间控制高炉和浸出设备表面在高含量氧化物和硅酸盐矿石浸出过程中的结垢，有利于形成含有大量硫酸镁的氧化皮，通过使用水或稀硫酸进行化学溶解更容易除去 在约50℃至250℃的温度下，比含有相当量的铝酸盐的比例。

公开(公告)号：US5328668A

公开(公告)日：1994-07-12

申请号：US528716

申请日：1990-05-24

申请人： Bruce J. Sabacky ,  Robert E. Doane

发明人： Bruce J. Sabacky ,  Robert E. Doane

IPC分类号： C01G41/04 ,  F28D7/00

CPC分类号： C01G41/04

摘要： Semiconductor grade tungsten hexafluoride (WF.sub.6) is produced by reacting tungsten metal with a recirculating flow of gaseous WF.sub.6 containing a small concentration of fluorine in a heated reactor. The high purity WF.sub.6 produced is useful for deposition of tungsten metallization in fabricating VLSI integrated circuitry.

公开(公告)号：US5348723A

公开(公告)日：1994-09-20

申请号：US476232

申请日：1990-02-07

申请人： Bruce J. Sabacky ,  Robert E. Doane

发明人： Bruce J. Sabacky ,  Robert E. Doane

IPC分类号： C01G41/04 ,  C01G41/02

CPC分类号： C01G41/04

摘要： Semiconductor grade tungsten hexafluoride (WF.sub.6) is produced by reacting tungsten metal with a recirculating flow of gaseous WF.sub.6 containing a small concentration of fluorine in a heated reactor. The high purity WF.sub.6 produced is useful for deposition of tungsten metallization in fabricating VLSI integrated circuitry.

摘要翻译： 半导体级六氟化钨（WF6）是通过在加热的反应器中使钨金属与含有少量氟的气态WF6的再循环流反应来制备的。 生产的高纯度WF6可用于在制造VLSI集成电路中沉积钨金属化。

公开(公告)号：US5324498A

公开(公告)日：1994-06-28

申请号：US501989

申请日：1990-03-30

申请人： Barry J. Streusand ,  Don A. Almond ,  Robert E. Doane

发明人： Barry J. Streusand ,  Don A. Almond ,  Robert E. Doane

IPC分类号： C01G41/04

CPC分类号： C01G41/04

摘要： A process is provided for purifying liquid tungsten hexafluoride containing volatile and non-volatile impurities. The process comprises the steps of evaporating tungsten hexafluoride from non-volatile impurities dissolved in liquid tungsten hexafluoride and condensing the evaporated tungsten hexafluoride. The condensed tungsten hexafluoride is subjected to freezing to solidify the tungsten hexafluoride. Volatile impurities are then evacuated from the solid tungsten hexafluoride. Thereafter, the solid tungsten hexafluoride is thawed to liquid tungsten hexafluoride to release trapped volatile impurities and then heated to a temperature above the boiling point of tungsten hexafluoride under pressure in a closed container. The volatile impurities dissolved in the thawed tungsten hexafluoride are removed and collected above the thawed tungsten hexafluoride and vented into an evacuated space.

摘要翻译： 提供了一种用于净化含有挥发性和非挥发性杂质的六氟化钨液体的方法。 该方法包括从溶解在液体六氟化钨中的非挥发性杂质中蒸发六氟化钨并冷凝蒸发的六氟化钨的步骤。 将冷凝的六氟化钨进行冷冻以固化六氟化钨。 然后将挥发性杂质从固体六氟化钨中排出。 此后，将固体六氟化钨解冻成液态六氟化钨以释放捕获的挥发性杂质，然后在密闭容器中加压至高于六氟化钨沸点的温度。 溶解在解冻的六氟化钨中的挥发性杂质被去除并收集在解冻的六氟化钨上方并排放到抽空的空间中。