公开(公告)号：US07196889B2

公开(公告)日：2007-03-27

申请号：US10298134

申请日：2002-11-15

申请人： Paul F Gerrish ,  Tyler J Mueller ,  Andreas A. Fenner ,  Mark Blanchfield

发明人： Paul F Gerrish ,  Tyler J Mueller ,  Andreas A. Fenner ,  Mark Blanchfield

IPC分类号： H02H9/00

CPC分类号： H01L27/0255

摘要： An overvoltage protection device is formed in a semiconductor substrate having a plurality of doped regions for forming semiconductor devices. The overvoltage protection device is adapted to draw current away from a device to be protected from excess voltage and has a switchable device having a terminal adapted to be coupled to a potential source of excess voltage and to the semiconductor substrate for drawing current away from the potential source of excess voltage when the switchable device is triggered, and for directing the current to the semiconductor substrate.A Zener diode is coupled to a second terminal of the switchable device to trigger the switchable device to a conducting state. The Zener diode is formed in the same doped region of the substrate as the trigger of the switchable device.

摘要翻译： 在具有用于形成半导体器件的多个掺杂区域的半导体衬底中形成过电压保护器件。 过电压保护装置适于将电流从设备中抽出以防止过电压，并且具有可切换装置，其具有适于耦合到潜在的过电压源的端子和用于将电流从电位引出的电流 触发可切换装置时的过电压源，以及将电流引导到半导体衬底。