摘要:
The invention concerns a microscopic system with atomic force, comprising a probe tip placed on one end of a lever arm (2), oscillating means (1) adapted to oscillate said probe tip substantially based on the fundamental frequency of said lever arm, said system including control means (7) for controlling said oscillating means to vary the oscillation frequency of said tip based on a plurality of harmonics of said lever arm. The invention is characterized in that said control means comprise an input receiving a parameter representing an operating threshold of said system, to vary the oscillation frequency of said tip based on at least one harmonic of said lever arm when said signal corresponds to a state of said system higher than said operating threshold.
摘要:
The invention concerns a microscopic system with atomic force, comprising a probe tip placed on one end of a lever arm (2), oscillating means (1) a to oscillate said probe tip substantially based on the fundamental frequency of said lever arm, said system including control means (7) for controlling said oscillating mean to vary the oscillation frequency of said tip based on a plurality of harmonics of said lever arm. The invention is characterized in that said control means comprise an input receiving a parameter representing an operating threshold of said system, to vary the oscillation frequency of said tip based on at least one harmonic of said lever arm when said signal corresponds to a state of said system higher than said operating threshold.
摘要:
A method for measuring a dose related to the non-ionizing effects of a radiation of particles comprises the irradiation of a capacitive element provided with an electrode made from a semiconductor material, the measurement of the capacitance of the capacitive element in an accumulation regime and the determination of the dose related to the non-ionizing effects from the measurement of capacitance of the capacitive element in the accumulation regime.
摘要:
A method for measuring a dose related to the non-ionizing effects of a radiation of particles comprises the irradiation of a capacitive element provided with an electrode made from a semiconductor material, the measurement of the capacitance of the capacitive element in an accumulation regime and the determination of the dose related to the non-ionizing effects from the measurement of capacitance of the capacitive element in the accumulation regime.