公开(公告)号：US06548413B1

公开(公告)日：2003-04-15

申请号：US09048208

申请日：1998-03-26

申请人： Paul Kwok Keung Ho ,  Thomas Schulue ,  Raymond Joy ,  Wai Lok Lee ,  Ramasamy Chockalingam ,  Ba Tuan Pham ,  Premachandran Vayalakkara

发明人： Paul Kwok Keung Ho ,  Thomas Schulue ,  Raymond Joy ,  Wai Lok Lee ,  Ramasamy Chockalingam ,  Ba Tuan Pham ,  Premachandran Vayalakkara

IPC分类号： H01L21302

CPC分类号： H01L21/32136

摘要： A new method of etching metal lines with reduced microloading effect is described. Semiconductor device structures are provided in and on a semiconductor substrate and covered with an insulating layer. A barrier metal layer is deposited overlying the insulating layer and a metal layer is deposited overlying the barrier metal layer. The metal layer is covered with a photoresist mask wherein there are both wide spaces and narrow spaces between portions of the photoresist mask. The metal layer is etched away where it is not covered by the photoresist mask wherein the barrier metal layer is reached within the wide spaces while some of the metal layer remains within the narrow spaces. The metal layer remaining within the narrow spaces is selectively etched away. Thereafter, the barrier metal layer not covered by the photoresist mask is etched away wherein the insulating layer is reached within the wide spaces while some of the barrier metal layer remains within the narrow spaces. The barrier metal layer remaining within the narrow spaces is selectively etched away. Thereafter, the insulating layer not covered by the photoresist mask is overetched to complete the metal lines without microloading in the fabrication of an integrated circuit.

摘要翻译： 描述了一种蚀刻具有减少的微加载效应的金属线的新方法。 半导体器件结构设置在半导体衬底中并在半导体衬底上并被绝缘层覆盖。 沉积覆盖在绝缘层上的阻挡金属层，并且沉积覆盖阻挡金属层的金属层。 金属层被光致抗蚀剂掩模覆盖，其中在光致抗蚀剂掩模的部分之间存在宽的空间和狭窄的空间。 金属层被蚀刻掉，其中它不被光致抗蚀剂掩模覆盖，其中阻挡金属层在宽空间内到达，而一些金属层保留在狭窄的空间内。 残留在狭窄空间内的金属层被有选择地蚀刻掉。 此后，蚀刻掉未被光致抗蚀剂掩模覆盖的阻挡金属层，其中绝缘层在宽空间内到达，而一些阻挡金属层保留在狭窄的空间内。 残留在狭窄空间内的阻挡金属层被有选择地蚀刻掉。 此后，在制造集成电路的过程中，将未被光致抗蚀剂掩模覆盖的绝缘层进行过蚀刻以完成金属线而无需微加载。