公开(公告)号：US20080053518A1

公开(公告)日：2008-03-06

申请号：US11469918

申请日：2006-09-05

申请人： Pen-Hsiu Chang ,  Hsin-Chun Lu ,  Ching-Ting Lee ,  Lain-Be Chang ,  Gwo-Mei Wu ,  Nai-Chuan Chen ,  An-Ping Chiu

发明人： Pen-Hsiu Chang ,  Hsin-Chun Lu ,  Ching-Ting Lee ,  Lain-Be Chang ,  Gwo-Mei Wu ,  Nai-Chuan Chen ,  An-Ping Chiu

IPC分类号： H01L31/00

CPC分类号： H01L31/022466 ,  H01L31/072 ,  Y02B10/10 ,  Y02E10/50

摘要： The present invention discloses a transparent solar cell system, which comprises: a light-permeable solar energy conversion device, balance units and conductive wires. The light-permeable solar energy conversion device has a transparent photovoltaic element, which is a PN semiconductor structure formed of two transparent conductive films. The transparent conductive films are respectively made of different oxides. The substrate of the transparent solar cell system is made of a common glass or a common plastic; therefore, the transparent solar cell system of the present invention is lightweight and environment-friendly. Further, the present invention has a simple fabrication process and a low fabrication cost; therefore, the present invention can be extensively applied to the windows and doors of buildings and vehicles and benefits the popularization of solar energy.

摘要翻译： 本发明公开了一种透明太阳能电池系统，其特征在于，包括：透光太阳能转换装置，平衡单元和导电线。 透光太阳能转换装置具有由两个透明导电膜形成的PN半导体结构的透明光电元件。 透明导电膜分别由不同的氧化物制成。 透明太阳能电池系统的基板由普通玻璃或普通塑料制成; 因此，本发明的透明太阳能电池系统是轻质且环境友好的。 此外，本发明具有简单的制造工艺和低制造成本; 因此，本发明可以广泛地应用于建筑物和车辆的门窗，并且有利于太阳能的普及。

公开(公告)号：US20060017060A1

公开(公告)日：2006-01-26

申请号：US10899703

申请日：2004-07-26

申请人： Nai-Chuan Chen ,  Pen-Hsiu Chang ,  An-Ping Chiu ,  Chuan-Feng Shih ,  Shun-Da Teng

发明人： Nai-Chuan Chen ,  Pen-Hsiu Chang ,  An-Ping Chiu ,  Chuan-Feng Shih ,  Shun-Da Teng

IPC分类号： H01L33/00

CPC分类号： H01L33/385 ,  H01L33/32 ,  H01L33/40

摘要： A semiconductor device using an electrically conductive substrate that has a metal connection includes an n-type/p-type electrically conductive substrate and one buffer layer formed on the n-type/p-type electrically conductive substrate. An electrically conductive semiconductor layer is formed on the buffer layer, and the metal connection is formed between the electrically conductive semiconductor layer and the electrically conductive substrate, wherein the electrically conductive semiconductor layer is an n-type/p-type nitride.

摘要翻译： 使用具有金属连接的导电基板的半导体器件包括n型/ p型导电基板和形成在n型/ p型导电基板上的一个缓冲层。 在缓冲层上形成导电半导体层，在导电性半导体层与导电性基板之间形成金属连接，导电性半导体层为n型/ p型氮化物。