公开(公告)号：US08278549B2

公开(公告)日：2012-10-02

申请号：US12285261

申请日：2008-10-01

申请人： Hsin-Chun Lu ,  Kuo-mei Wu ,  Pen-Hsiu Chang ,  Chun-Lung Chu ,  Chi-Yo Lai

发明人： Hsin-Chun Lu ,  Kuo-mei Wu ,  Pen-Hsiu Chang ,  Chun-Lung Chu ,  Chi-Yo Lai

IPC分类号： H01L31/00

CPC分类号： H01L31/022466 ,  H01L31/02168 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

摘要： The invention relates to a solar photovoltaic energy conversion apparatus. The apparatus consists of a substrate, a buffer layer formed on the substrate layer, a first transparent conductive oxide layer formed on the buffer layer, periodic protrusions containing first silicon layers formed on the first transparent conductive oxide layer, second silicon layers formed on the first silicon layers, a second transparent conductive oxide layer covering the first silicon layers, the second silicon layers and the first transparent conductive oxide layer, and an anti-reflective protective layer. The first silicon layer and the second silicon layer are the electrodes with the opposite type of charge carriers. The first transparent conductive layer and the second transparent conductive layer are the electrodes with the opposite type of charge carriers. This TCO-based hybrid solar photovoltaic energy conversion device not only can allow the transmission of visible sunlight but also can enhance the photovoltaic energy.

摘要翻译： 本发明涉及一种太阳能光伏能量转换装置。 该装置由基板，形成在基板层上的缓冲层，形成在缓冲层上的第一透明导电氧化物层，包含形成在第一透明导电氧化物层上的第一硅层的周期性突起，在第一透明导电氧化物层上形成的第二硅层 硅层，覆盖第一硅层的第二透明导电氧化物层，第二硅层和第一透明导电氧化物层，以及抗反射保护层。 第一硅层和第二硅层是具有相反类型电荷载流子的电极。 第一透明导电层和第二透明导电层是具有相反类型电荷载体的电极。 这种基于TCO的混合太阳能光伏能量转换装置不仅可以允许可见光的透射，而且还可以增强光伏能量。

公开(公告)号：US20060017060A1

公开(公告)日：2006-01-26

申请号：US10899703

申请日：2004-07-26

申请人： Nai-Chuan Chen ,  Pen-Hsiu Chang ,  An-Ping Chiu ,  Chuan-Feng Shih ,  Shun-Da Teng

发明人： Nai-Chuan Chen ,  Pen-Hsiu Chang ,  An-Ping Chiu ,  Chuan-Feng Shih ,  Shun-Da Teng

IPC分类号： H01L33/00

CPC分类号： H01L33/385 ,  H01L33/32 ,  H01L33/40

摘要： A semiconductor device using an electrically conductive substrate that has a metal connection includes an n-type/p-type electrically conductive substrate and one buffer layer formed on the n-type/p-type electrically conductive substrate. An electrically conductive semiconductor layer is formed on the buffer layer, and the metal connection is formed between the electrically conductive semiconductor layer and the electrically conductive substrate, wherein the electrically conductive semiconductor layer is an n-type/p-type nitride.

摘要翻译： 使用具有金属连接的导电基板的半导体器件包括n型/ p型导电基板和形成在n型/ p型导电基板上的一个缓冲层。 在缓冲层上形成导电半导体层，在导电性半导体层与导电性基板之间形成金属连接，导电性半导体层为n型/ p型氮化物。

公开(公告)号：US20070045607A1

公开(公告)日：2007-03-01

申请号：US11211673

申请日：2005-08-26

申请人： Nai-Chuan Chen ,  Chin-An Chang ,  Pen-Hsiu Chang ,  Chuan-Feng Shih ,  Wei-Chieh Lien

发明人： Nai-Chuan Chen ,  Chin-An Chang ,  Pen-Hsiu Chang ,  Chuan-Feng Shih ,  Wei-Chieh Lien

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/12

摘要： The present invention discloses a AlGaInN nitride substrate structure using TiN as buffer layer and the manufacturing method thereof. The present invention deposits TiN having (111) surface onto the silicon substrate having (111) surface as a buffer layer, and grows III-V AlGaInN nitride epitaxy structure having (0001) surface. The present method can form high-quality III-V AlGaInN nitride epitaxy layer to manufacture the vertical-conducted III-V AlGaInN nitride devices and utilize the high-reflection TiN surface to enhance the efficiency of the opti-electrical devices. The present invention can further prevent the silicon substrate forming the noncrystalline SiNx in the AlGaInN epitaxy process, so that the yield of the chip can be improved.

摘要翻译： 本发明公开了一种使用TiN作为缓冲层的AlGaInN氮化物衬底结构及其制造方法。 本发明将具有（111）表面的TiN沉积到具有（111）表面的硅衬底上作为缓冲层，并且生长具有（0001）表面的III-V AlGaInN氮化物外延结构。 本发明方法可以形成高品质的III-V AlGaInN氮化物外延层，以制造垂直导电的III-V AlGaInN氮化物器件，并利用高反射TiN表面来提高光电器件的效率。 本发明可以进一步防止在AlGaInN外延工艺中形成非结晶SiN x x的硅衬底，从而可以提高芯片的产量。

公开(公告)号：US20090084439A1

公开(公告)日：2009-04-02

申请号：US12285261

申请日：2008-10-01

申请人： Hsin-Chun Lu ,  Kuo-mei Wu ,  Pen-Hsiu Chang ,  Chun-Lung Chu ,  Chi-Yo Lai

发明人： Hsin-Chun Lu ,  Kuo-mei Wu ,  Pen-Hsiu Chang ,  Chun-Lung Chu ,  Chi-Yo Lai

IPC分类号： H01L31/00

CPC分类号： H01L31/022466 ,  H01L31/02168 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

摘要： The invention relates to a solar photovoltaic energy conversion apparatus. The apparatus consists of a substrate, a buffer layer formed on the substrate layer, a first transparent conductive oxide layer formed on the buffer layer, periodic protrusions containing first silicon layers formed on the first transparent conductive oxide layer, second silicon layers formed on the first silicon layers, a second transparent conductive oxide layer covering the first silicon layers, the second silicon layers and the first transparent conductive oxide layer, and an anti-reflective protective layer. The first silicon layer and the second silicon layer are the electrodes with the opposite type of charge carriers. The first transparent conductive layer and the second transparent conductive layer are the electrodes with the opposite type of charge carriers. This TCO-based hybrid solar photovoltaic energy conversion device not only can allow the transmission of visible sunlight but also can enhance the photovoltaic energy.

摘要翻译： 本发明涉及一种太阳能光伏能量转换装置。 该装置由基板，形成在基板层上的缓冲层，形成在缓冲层上的第一透明导电氧化物层，包含形成在第一透明导电氧化物层上的第一硅层的周期性突起，在第一透明导电氧化物层上形成的第二硅层 硅层，覆盖第一硅层的第二透明导电氧化物层，第二硅层和第一透明导电氧化物层，以及抗反射保护层。 第一硅层和第二硅层是具有相反类型电荷载流子的电极。 第一透明导电层和第二透明导电层是具有相反类型电荷载体的电极。 这种基于TCO的混合太阳能光伏能量转换装置不仅可以允许可见光的透射，而且还可以增强光伏能量。

公开(公告)号：US20080053518A1

公开(公告)日：2008-03-06

申请号：US11469918

申请日：2006-09-05

申请人： Pen-Hsiu Chang ,  Hsin-Chun Lu ,  Ching-Ting Lee ,  Lain-Be Chang ,  Gwo-Mei Wu ,  Nai-Chuan Chen ,  An-Ping Chiu

发明人： Pen-Hsiu Chang ,  Hsin-Chun Lu ,  Ching-Ting Lee ,  Lain-Be Chang ,  Gwo-Mei Wu ,  Nai-Chuan Chen ,  An-Ping Chiu

IPC分类号： H01L31/00

CPC分类号： H01L31/022466 ,  H01L31/072 ,  Y02B10/10 ,  Y02E10/50

摘要： The present invention discloses a transparent solar cell system, which comprises: a light-permeable solar energy conversion device, balance units and conductive wires. The light-permeable solar energy conversion device has a transparent photovoltaic element, which is a PN semiconductor structure formed of two transparent conductive films. The transparent conductive films are respectively made of different oxides. The substrate of the transparent solar cell system is made of a common glass or a common plastic; therefore, the transparent solar cell system of the present invention is lightweight and environment-friendly. Further, the present invention has a simple fabrication process and a low fabrication cost; therefore, the present invention can be extensively applied to the windows and doors of buildings and vehicles and benefits the popularization of solar energy.

摘要翻译： 本发明公开了一种透明太阳能电池系统，其特征在于，包括：透光太阳能转换装置，平衡单元和导电线。 透光太阳能转换装置具有由两个透明导电膜形成的PN半导体结构的透明光电元件。 透明导电膜分别由不同的氧化物制成。 透明太阳能电池系统的基板由普通玻璃或普通塑料制成; 因此，本发明的透明太阳能电池系统是轻质且环境友好的。 此外，本发明具有简单的制造工艺和低制造成本; 因此，本发明可以广泛地应用于建筑物和车辆的门窗，并且有利于太阳能的普及。