公开(公告)号：US06838381B2

公开(公告)日：2005-01-04

申请号：US10329598

申请日：2002-12-26

申请人： Peng-Fu Hsu ,  Ming-Huan Tsai ,  Baw-Ching Perng ,  Ju-Wang Hsu ,  Yaun-Hung Chiu

发明人： Peng-Fu Hsu ,  Ming-Huan Tsai ,  Baw-Ching Perng ,  Ju-Wang Hsu ,  Yaun-Hung Chiu

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76829

摘要： A method of manufacturing a semiconductor device is provided. A nickel silicide layer (e.g., NiSi) is formed on a substrate. Next, a hydrogen plasma treatment may be performed on the silicide layer, which may induce the formation of metal/silicon hydride bonds in the silicide layer. An etch stop layer is formed over the silicide layer. A dielectric layer is formed over the etch stop layer. An opening is formed in the dielectric layer. A portion of the etch stop layer is etched away at the opening to expose at least a portion of the silicide layer therebeneath. The etch chemistry mixture used during the etching step preferably includes hydrogen gas. The change in sheet resistance for the exposed silicide layer portion at the opening after the etching step, as compared to before the etching step, is preferably not greater than about 0.10 ohms/square.

摘要翻译： 提供一种制造半导体器件的方法。 在衬底上形成硅化镍层（例如NiSi）。 接下来，可以在硅化物层上进行氢等离子体处理，这可能在硅化物层中引起金属/硅氢化物键的形成。 在硅化物层之上形成蚀刻停止层。 在蚀刻停止层上方形成介电层。 在电介质层中形成开口。 蚀刻停止层的一部分在开口处被蚀刻掉以暴露其下面的硅化物层的至少一部分。 在蚀刻步骤期间使用的蚀刻化学混合物优选包括氢气。 与蚀刻步骤之前相比，在蚀刻步骤之后的开口处的暴露的硅化物层部分的薄层电阻的变化优选不大于约0.10欧姆/平方。