公开(公告)号：US20080198644A1

公开(公告)日：2008-08-21

申请号：US11917571

申请日：2006-06-08

申请人： Per Broms ,  Christer Karlsson ,  Geirr I. Leistad ,  Per Hamberg ,  Staffan Bjorklid ,  Johan Carlsson ,  Goran Gustafsson ,  Hans Gude Gudesen

发明人： Per Broms ,  Christer Karlsson ,  Geirr I. Leistad ,  Per Hamberg ,  Staffan Bjorklid ,  Johan Carlsson ,  Goran Gustafsson ,  Hans Gude Gudesen

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： G06K7/0021 ,  B82Y10/00 ,  G11B9/02 ,  G11B9/1454 ,  G11C11/22 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016

摘要： In a non-volatile electric memory system a memory unit (4) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.

摘要翻译： 在非易失性电存储器系统中，存储器单元（4）和读/写单元（11）被提供为物理上分离的单元。 存储器单元（10）基于可通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料（4）。 电极装置和/或接触装置被提供在存储器单元或读/写单元中，并且接触装置至少总是设置在读/写单元中。 电极和触点以几何布置提供，其几何地限定存储器层中的一个或多个存储器单元。 读/写单元中的接触装置可连接到位于读/写单元中的驱动，感测和控制装置或与其连接的外部设备。 在存储器单元和读/写单元之间建立物理接触关闭寻址的存储单元上的电路，从而可以实现读，写或擦除操作。 存储单元的存储材料可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者它可以是具有电阻阻抗特性的材料，使得材料的存储单元可以被设置为特定的稳定 通过施加电场的电阻值。

公开(公告)号：US20050248979A1

公开(公告)日：2005-11-10

申请号：US11053905

申请日：2005-02-10

申请人： Christer Karlsson ,  Per Hamberg ,  Staffan Bjorklid ,  Michael Thompson ,  Richard Womack

发明人： Christer Karlsson ,  Per Hamberg ,  Staffan Bjorklid ,  Michael Thompson ,  Richard Womack

IPC分类号： G11C11/22 ,  G11C11/14

CPC分类号： G11C11/22

摘要： In a method for operating a passive matrix-addessable ferroelectric or electret memory device comprising memory cells in the form of a ferroelectric or electret thin-film polarizable memory material exhibiting hysteresis, particularly a ferroelectric or electret polymer thin film, and a first set of parallel electrodes forming word line electrodes in the device and a second set of parallel electrodes forming bit lines in the device, the word lines being oriented orthogonally to the bit lines, such that the word lines and bit lines are in direct contact with the memory cells, which can be set to either of two polarization states or switched between these by applying a switching voltage larger than a coercive voltage of the memory material between a word line and a bit line, a voltage pulse protocol with at least one disturb generating operation cycle is applied for switching selected addressed cells to determined polarization state. The voltage pulse protocol further comprises a pre-disturb and/or post-disturb cycle before and after the disturb generating operation cycle respectively in order to minimize the effect of disturb voltages on non-addressed memory cells, when such voltages are generated thereto in the operation cycle when it is applied for either a write or read operation.

摘要翻译： 在一种用于操作无源矩阵可加性铁电或驻极体存储器件的方法中，该器件包括呈现滞后性的铁电或驻极体薄膜可极化存储材料形式的存储单元，特别是铁电或驻极体聚合物薄膜，以及第一组平行 在器件中形成字线电极的电极和在器件中形成位线的第二组并联电极，字线与位线正交定向，使得字线和位线与存储器单元直接接触， 通过施加大于字线和位线之间的存储材料的矫顽电压的开关电压，可将其设置为两个极化状态中的任一个或在其之间切换，具有至少一个干扰产生操作周期的电压脉冲协议是 用于将所选择的寻址单元切换到确定的极化状态。 电压脉冲协议还包括在干扰产生操作周期之前和之后的预先干扰和/或干扰后周期，以便最小化干扰电压对非寻址存储器单元的影响，当在其中产生这样的电压时 当它被应用于写入或读取操作时的操作周期。