公开(公告)号：US20080198644A1

公开(公告)日：2008-08-21

申请号：US11917571

申请日：2006-06-08

申请人： Per Broms ,  Christer Karlsson ,  Geirr I. Leistad ,  Per Hamberg ,  Staffan Bjorklid ,  Johan Carlsson ,  Goran Gustafsson ,  Hans Gude Gudesen

发明人： Per Broms ,  Christer Karlsson ,  Geirr I. Leistad ,  Per Hamberg ,  Staffan Bjorklid ,  Johan Carlsson ,  Goran Gustafsson ,  Hans Gude Gudesen

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： G06K7/0021 ,  B82Y10/00 ,  G11B9/02 ,  G11B9/1454 ,  G11C11/22 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016

摘要： In a non-volatile electric memory system a memory unit (4) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrode means and/or contact means are either provided in the memory unit or in the read/write unit and contact means are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Contact means in the read/write unit are provided connectable to driving, sensing and control means located in the read/write unit or in an external device connected with the latter. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.

摘要翻译： 在非易失性电存储器系统中，存储器单元（4）和读/写单元（11）被提供为物理上分离的单元。 存储器单元（10）基于可通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料（4）。 电极装置和/或接触装置被提供在存储器单元或读/写单元中，并且接触装置至少总是设置在读/写单元中。 电极和触点以几何布置提供，其几何地限定存储器层中的一个或多个存储器单元。 读/写单元中的接触装置可连接到位于读/写单元中的驱动，感测和控制装置或与其连接的外部设备。 在存储器单元和读/写单元之间建立物理接触关闭寻址的存储单元上的电路，从而可以实现读，写或擦除操作。 存储单元的存储材料可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者它可以是具有电阻阻抗特性的材料，使得材料的存储单元可以被设置为特定的稳定 通过施加电场的电阻值。

公开(公告)号：US07764529B2

公开(公告)日：2010-07-27

申请号：US11917579

申请日：2006-06-08

申请人： Geirr I. Leistad ,  Per Broms ,  Christer Karlsson

发明人： Geirr I. Leistad ,  Per Broms ,  Christer Karlsson

IPC分类号： G11C5/02

CPC分类号： G06K7/0021 ,  B82Y10/00 ,  G11B9/02 ,  G11B9/1454 ,  G11C11/22 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016

摘要： In a non-volatile electric memory system a card-like memory unit (10) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. The read/write unit (10) comprises contact means (9) provided in a determined geometrical pattern enabling a definition of memory cells in memory unit (10) in an initial write operation, the memory cells being located in a geometrical pattern corresponding to that of the contact means (9). Establishing a physical contact between the memory unit (10) and the read/write unit (11) closes an electrical circuit over an addressed memory cell such that read, write or erase operations can be effected. The memory material (4) of the memory unit (10) can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.

摘要翻译： 在非易失性电存储器系统中，作为物理上分离的单元设置有卡状存储器单元（10）和读/写单元（11）。 存储器单元（10）基于可通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料（4）。 读/写单元（10）包括以确定的几何图案提供的接触装置（9），使得能够在初始写入操作中对存储器单元（10）中的存储器单元进行定义，存储器单元位于与其对应的几何图案 的接触装置（9）。 在存储器单元（10）和读/写单元（11）之间建立物理接触通过寻址的存储单元封闭电路，从而可以实现读，写或擦除操作。 存储单元（10）的存储材料（4）可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者它可以是具有阻抗特性的材料，使得材料的存储单元可以 通过施加电场来设定为特定的稳定电阻值。

公开(公告)号：US20080198640A1

公开(公告)日：2008-08-21

申请号：US11917579

申请日：2006-06-08

申请人： Geirr I. Leistad ,  Per Broms ,  Christer Karlsson

发明人： Geirr I. Leistad ,  Per Broms ,  Christer Karlsson

IPC分类号： G11C5/02 ,  G11C7/00 ,  G11C11/00 ,  G11C11/22

CPC分类号： G06K7/0021 ,  B82Y10/00 ,  G11B9/02 ,  G11B9/1454 ,  G11C11/22 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0014 ,  G11C13/0016

摘要： In a non-volatile electric memory system a card-like memory unit (10) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. The read/write unit (10) comprises contact means (9) provided in a determined geometrical pattern enabling a definition of memory cells in memory unit (10) in an initial write operation, the memory cells being located in a geometrical pattern corresponding to that of the contact means (9). Establishing a physical contact between the memory unit (10) and the read/write unit (11) closes an electrical circuit over an addressed memory cell such that read, write or erase operations can be effected. The memory material (4) of the memory unit (10) can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.

摘要翻译： 在非易失性电存储器系统中，作为物理上分离的单元设置有卡状存储器单元（10）和读/写单元（11）。 存储器单元（10）基于可通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料（4）。 读/写单元（10）包括以确定的几何图案提供的接触装置（9），使得能够在初始写入操作中对存储器单元（10）中的存储器单元进行定义，存储器单元位于与其对应的几何图案 的接触装置（9）。 在存储器单元（10）和读/写单元（11）之间建立物理接触通过寻址的存储单元封闭电路，从而可以实现读，写或擦除操作。 存储单元（10）的存储材料（4）可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者它可以是具有阻抗特性的材料，使得材料的存储单元可以 通过施加电场来设定为特定的稳定电阻值。

公开(公告)号：US11190028B2

公开(公告)日：2021-11-30

申请号：US16543432

申请日：2019-08-16

申请人： Christer Karlsson ,  Per Broms

发明人： Christer Karlsson ,  Per Broms

IPC分类号： H02J7/00 ,  B60L58/22 ,  H01M10/48 ,  H01M10/0525 ,  G01R31/396

摘要： A battery management system having configurable batteries is disclosed. The battery management system generally includes (a) one or more cell control units, each cell control unit configured to control and/or balance a charge in a plurality of battery cells, and (b) a master controller in electrical communication with cell control unit(s). The cell control unit(s) as a whole include one or more switches, configured to be electrically connected to a first battery cell of a plurality of battery cells, and a resistor, a capacitor or an inductor electrically (i) connected to one switch and (ii) connected or connectable to a second battery cell. The master controller is configured to open or close each switch. The configurable battery generally includes a plurality of battery cells and switches configured to connect or disconnect the plurality of battery cells in a configurable or predetermined manner.

公开(公告)号：US20060007722A1

公开(公告)日：2006-01-12

申请号：US11168375

申请日：2005-06-29

申请人： Per-Erik Nordal ,  Geirr Leistad ,  Per Broms ,  Hans Gudesen

发明人： Per-Erik Nordal ,  Geirr Leistad ,  Per Broms ,  Hans Gudesen

IPC分类号： G11C11/42

CPC分类号： G11C29/021 ,  G11C11/22 ,  G11C29/02 ,  G11C29/028 ,  G11C2029/5002

摘要： In a heating and temperature control system for a data storage apparatus comprising at least one matrix-addressable ferroelectric or electret memory device, Joule heating means are provided in the memory device, a temperature determining means is connected with controller circuitry and the controller circuitry is connected with an external power supply, which controlled by the former powers the Joule heating means to achieve a selected operating temperature. In a method for operating the heating and temperature control system an ambient or instant temperature of the memory device is determined and compared with the set nominal optimal temperature, and the difference between these temperatures is used in a predefined algorithm for establishing control parameters for the application of power to the Joule heating means to achieve the selected operating temperature in the memory device during an addressing operation thereto.

摘要翻译： 在包括至少一个可矩阵寻址的铁电或驻极体存储装置的数据存储装置的加热和温度控制系统中，在存储装置中提供焦耳加热装置，温度确定装置与控制器电路连接，并且控制器电路被连接 具有外部电源，由前者的焦炭控制，焦耳加热意味着实现选定的工作温度。 在用于操作加热和温度控制系统的方法中，确定存储器件的环境温度或即时温度并将其与设定的标称最佳温度进行比较，并且在用于建立应用的控制参数的预定义算法中使用这些温度之间的差异 的焦耳加热装置的功率，以在其寻址操作期间实现存储装置中的选定的工作温度。

公开(公告)号：US20050073869A1

公开(公告)日：2005-04-07

申请号：US10659428

申请日：2003-09-11

申请人： Hans Gudesen ,  Per-Erik Nordal ,  Geirr Leistad ,  Per Broms ,  Per Sandstrom ,  Mats Johansson

发明人： Hans Gudesen ,  Per-Erik Nordal ,  Geirr Leistad ,  Per Broms ,  Per Sandstrom ,  Mats Johansson

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A matrix-addressable ferroelectric or electret memory device and a method of operating are explained. The method includes applying a first plurality of voltage difference across a first and a second set of electrodes in the memory when data are read, and applying a second plurality of voltage differences when data are refreshed or rewritten. The first and second plurality of voltage differences correspond to sets of potential levels comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is used for determining at least one correction factor for the voltage pulses, whereby the pulse parameter is adjusted accordingly. The memory device comprises means for determining the at least one parameter, a calibration memory connected with means for determining the correction factor, and control circuits for adjusting pulse parameters as applied to read and write operations in the memory device.