High aspect ratio P-N junctions by the thermal gradient zone melting
technique
    2.
    发明授权
    High aspect ratio P-N junctions by the thermal gradient zone melting technique 失效
    通过热梯度区熔化技术的高纵横比P-N结

    公开(公告)号:US4030116A

    公开(公告)日:1977-06-14

    申请号:US577999

    申请日:1975-05-16

    摘要: A thermal gradient zone melting technique is employed to migrate an array of metal buttons through a body of semiconductor material to form high aspect ratio P-N junctions therein. Semiconductor devices embodying such P-N junctions are suitable for employment in X-ray and infrared detection and imaging. Each button preferably has the configuration of an equilateral triangle and the array preferably has a hexagonal configuration.

    摘要翻译: 使用热梯度区熔化技术将金属按钮阵列迁移穿过半导体材料体以在其中形成高纵横比P-N结。 体现这种P-N结的半导体器件适用于X射线和红外检测和成像。 每个按钮优选地具有等边三角形的构造,并且阵列优选地具有六边形构造。