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    Method of forming single crystal layer on dielectric layer by controlled rapid heating
    6.
    发明授权
    Method of forming single crystal layer on dielectric layer by controlled rapid heating 失效
    通过控制快速加热在电介质层上形成单晶层的方法

    公开(公告)号：US4714684A

    公开(公告)日：1987-12-22

    申请号：US844324

    申请日：1986-03-26

    Applicant: Kazuyuki Sugahara ,  Tadashi Nishimura ,  Shigeru Kusunoki ,  Yasuo Inoue

    Inventor： Kazuyuki Sugahara ,  Tadashi Nishimura ,  Shigeru Kusunoki ,  Yasuo Inoue

    IPC: H01L21/20 ,  H01L21/263 ,  H01L21/822 ,  H01L27/00 ,  C30B13/06

    CPC classification number: H01L21/2026 ,  H01L21/8221 ,  Y10S117/904 ,  Y10S148/093

    Abstract: In a method of manufacturing a semiconductor device of a three-dimensional structure having a semiconductor substrate and another single crystal semiconductor layer formed thereon, the another single crystal semiconductor layer is prepared by melting a vapor-deposited amorphous or polycrystalline semiconductor layer by the energy of laser beams then solidifying and converting the layer into single crystals. For initiating the melting at selected regions of the layer, the layer is formed at the surface thereof with a silicon nitride film of a uniform thickness and a silicon nitride film with a thickness at the region corresponding to the selected region different from that of the remaining region. The region thicker or thinner than other region reflects the laser energy at different reflectivity thereby to provide a desired temperature distribution.

    Abstract translation: 在制造具有半导体衬底和形成在其上的另一个单晶半导体层的三维结构的半导体器件的方法中，另一个单晶半导体层是通过将蒸镀的非晶或多晶半导体层的能量 然后激光束固化并将层转化为单晶。 为了在层的选定区域开始熔化，在其表面上形成具有均匀厚度的氮化硅膜和在对应于所选区域的区域的厚度的氮化硅膜的层 地区。 比其他区域更厚或更薄的区域反映了不同反射率下的激光能量，从而提供期望的温度分布。

    Lateral epitaxial growth by seeded solidification
    7.
    发明授权
    Lateral epitaxial growth by seeded solidification 失效
    通过种子凝固进行外侧外延生长

    公开(公告)号：US4670088A

    公开(公告)日：1987-06-02

    申请号：US828601

    申请日：1986-02-11

    Applicant: Bor-Yeu Tsaur ,  John C. C. Fan ,  Michael W. Geis

    Inventor： Bor-Yeu Tsaur ,  John C. C. Fan ,  Michael W. Geis

    IPC: C30B13/00 ,  C30B13/06 ,  C30B27/00 ,  H01L21/20 ,  H01L21/324 ,  C30B19/00

    CPC classification number: H01L21/324 ,  C30B13/00 ,  C30B13/06 ,  C30B27/00 ,  C30B29/60 ,  H01L21/2022 ,  Y10S148/134

    Abstract: An improved method and apparatus for crystallizing amorphous or polycrystalline material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and single crystalline seed material is disposed in contact and/or adjacent to or with at least a portion of the material which is to be crystallized. A layer of material which serves as a "wetting agent" is then formed over the material to be crystallized. The structure thus formed is subjected to a heat treatment which melts the material being crystallized and when the material solidifies its crystalline structure is substantially epitaxial based on the seed material. The "wetting agent" layer serves to prevent deleterious balling up of the material during crystallization.

    Abstract translation: 公开了一种用于结晶非晶或多晶材料的改进方法和装置。 在本发明中，将要结晶的材料形成在基底上，并且将单晶种子材料设置成接触和/或邻近或与要结晶的材料的至少一部分接触。 然后在要结晶的材料上形成用作“润湿剂”的材料层。 对由此形成的结构进行热处理，该热处理熔化正在结晶的材料，并且当材料固化其晶体结构基于种子材料基本上是外延的。 “润湿剂”层用于防止在结晶过程中材料的有害的滚珠。

    Method for reducing temperature variations across a semiconductor wafer during heating
    8.
    发明授权
    Method for reducing temperature variations across a semiconductor wafer during heating 失效
    用于在加热期间减少跨越半导体晶片的温度变化的方法

    公开(公告)号：US4560420A

    公开(公告)日：1985-12-24

    申请号：US620246

    申请日：1984-06-13

    Applicant: Herbert A. Lord

    Inventor： Herbert A. Lord

    IPC: H01L21/18 ,  C30B13/06 ,  C30B13/24 ,  C30B33/02 ,  H01L21/20 ,  H01L21/324 ,  H01L21/265

    CPC classification number: C30B13/06 ,  C30B13/24

    Abstract: Temperature variations across the surface of a semiconductor wafer (12), having at least one major surface thereof exposed to a source of radiant heat energy (18), are reduced by positioning a reflective ring (30, 30', 30" or 30'") proximate the wafer edge (28). The reflective ring (30, 30', 30" or 30'") reflects the heat energy towards the wafer periphery (27) to provide substantially uniform heat across the wafer.

    Abstract translation: 通过将反射环（30,30'，30“或30'）定位在半导体晶片（12）的表面上的具有暴露于辐射热能源（18）的至少一个主表面的温度变化 靠近晶片边缘（28）。 反射环（30,30'，30“或30”'）将热能反射到晶片周边（27），以提供穿过晶片的基本均匀的热量。

    Apparatus for semiconductor ribbon-to-ribbon conversion
    10.
    发明授权
    Apparatus for semiconductor ribbon-to-ribbon conversion 失效
    用于半导体色带到色带转换的设备

    公开(公告)号：US4427638A

    公开(公告)日：1984-01-24

    申请号：US301627

    申请日：1981-09-14

    Applicant: Ralph J. Ellis ,  Richard W. Gurtler ,  Kalluri R. Sarma

    Inventor： Ralph J. Ellis ,  Richard W. Gurtler ,  Kalluri R. Sarma

    IPC: C30B13/00 ,  C30B13/24 ,  C30B13/06 ,  C30B13/32

    CPC classification number: C30B13/24 ,  C30B13/00 ,  C30B29/60 ,  Y10S117/904 ,  Y10S117/905 ,  Y10T117/1076 ,  Y10T117/1084

    Abstract: Apparatus is provided for semiconductor ribbon-to-ribbon conversion in a rigid edge mode. A combination carrier and mask is provided by which the ribbon is secured during the conversion process. The carrier holds the ribbon and simultaneously masks the edges of the ribbon from the heating effects of an impinging energy beam. The energy beam, such as a laser or electron beam, impinges on the ribbon and creates a molten zone which extends through the thickness of the ribbon. During the growth process, the molten zone is caused to move along the length of the ribbon. The mask prevents melting of the extreme edge portions of the ribbon and thus allows a rapid growth rate and a stable molten zone without sophisticated electronic equipment to gate the energy beam at the ribbon edges.

    Abstract translation: 提供了用于以刚性边缘模式进行半导体色带到色带转换的装置。 提供组合载体和掩模，通过该组合载体和掩模在转换过程中固定色带。 载体保持色带并同时从着色能量束的加热效应掩盖色带的边缘。 能量束（例如激光或电子束）撞击在带上并产生延伸穿过带的厚度的熔融区。 在生长过程中，使熔融区沿带的长度移动。 掩模防止带状物的最末端部分的熔化，从而允许快速生长速率和稳定的熔融区域，而不需要复杂的电子设备来在带状边缘处浇注能量束。

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