公开(公告)号：US11621200B2

公开(公告)日：2023-04-04

申请号：US17804614

申请日：2022-05-31

申请人： Peter Hugh Blair

发明人： Peter Hugh Blair

IPC分类号： H01L21/82 ,  H01L21/8249 ,  H01L27/06 ,  H01L21/04

摘要： This application provides a process for making a circuit of a bipolar junction transistor (BJT). The switchable short in one implementation of the invention is formed in a semiconductor wafer. A collector region is formed in the semiconductor wafer and inside of the collector region, a first base region is formed. An emitter region is formed inside the base region to form the BJT. A drain region is also formed inside the base region adjacent to the emitter region. A gate is formed over a portion of the base region adjacent to the drain region and the emitter region. The gate is connected to the collection region.

公开(公告)号：US20220336445A1

公开(公告)日：2022-10-20

申请号：US17804614

申请日：2022-05-31

申请人： Peter Hugh Blair

发明人： Peter Hugh Blair

IPC分类号： H01L27/06 ,  H01L21/8249

摘要： This application provides a process for making a circuit of a bipolar junction transistor (BJT). The switchable short in one implementation of the invention is formed in a semiconductor wafer. A collector region is formed in the semiconductor wafer and inside of the collector region, a first base region is formed. An emitter region is formed inside the base region to form the BJT. A drain region is also formed inside the base region adjacent to the emitter region. A gate is formed over a portion of the base region adjacent to the drain region and the emitter region. The gate is connected to the collection region.