Planar electron emitter (PEE)
    1.
    发明授权
    Planar electron emitter (PEE) 失效
    平面电子发射体(PEE)

    公开(公告)号:US07399987B1

    公开(公告)日:2008-07-15

    申请号:US09700463

    申请日:1999-06-11

    IPC分类号: H01J19/24

    摘要: A planar electron emitter, based on the existence of quasi-ballistic transport of electrons is disclosed. In its preferred embodiment the planar electron emitter structure consists of a body of finite gap pure semiconductor or insulator, the said body of macroscopic thickness (˜1 mm) being terminated by two parallel surfaces and of a set of two electrodes deposited/grown on the said two free surfaces such that when a low external electrical field (˜100 V/cm) is applied to this structure, consisting of two electrodes and the said semiconductor or insulating body sandwiched between them, a large fraction of electrons injected into the said semiconductor or insulator body from the negatively charged electrode (cathode) is quasi-ballistic in nature, that is this fraction of injected electrons is accelerated within the said semiconductor or insulator body without suffering any appreciable inelastic energy losses, thereby achieving sufficient energy and appropriate momentum at the positively charged electrode (anode) to be able to traverse through the said anode and to escape from the said structure into empty space (vacuum), said semiconductor or insulator body comprises a material or material system having a predetermined crystal orientation.

    摘要翻译: 公开了一种基于电子的准弹道输运的存在的平面电子发射体。 在其优选实施例中,平面电子发射器结构由有限间隙纯半导体或绝缘体的主体组成,所述宏观厚度(〜1mm)的主体由两个平行表面和一组两个沉积/生长在 所述两个自由表面使得当由两个电极和夹在其间的所述半导体或绝缘体组成的该结构施加低的外部电场(〜100V / cm)时,注入到所述半导体中的大部分电子 或来自带负电荷的电极(阴极)的绝缘体本质上是准弹道的,也就是说,注入的电子的这一部分在所述半导体或绝缘体内部被加速,而不会受到任何明显的非弹性能量损失,从而实现足够的能量和适当的动量 带正电的电极(阳极)能够穿过所述阳极并从所述结构件逸出 所述半导体或绝缘体包括具有预定晶体取向的材料或材料体系。