公开(公告)号：US07615390B2

公开(公告)日：2009-11-10

申请号：US10530063

申请日：2003-08-13

申请人： Philippe Meunier-Beillard ,  Mathieu Rosa Jozef Caymax

发明人： Philippe Meunier-Beillard ,  Mathieu Rosa Jozef Caymax

IPC分类号： H01L21/00

CPC分类号： H01L21/0445 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262

摘要： The present invention provides a method of depositing epitaxial layers based on Group IV elements on a silicon substrate by Chemical Vapor Deposition, wherein nitrogen or one of the noble gases is used as a carrier gas, and the invention further provides a Chemical Vapor Deposition apparatus (10) comprising a chamber (12) having a gas input port (14) and a gas output port (16), and means (18) for mounting a silicon substrate within the chamber (12), said apparatus further including a gas source connected to the input port and arranged to provide nitrogen or a noble gas as a carrier gas.

摘要翻译： 本发明提供了一种通过化学气相沉积在硅衬底上沉积基于IV族元素的外延层的方法，其中使用氮或一种惰性气体作为载气，本发明还提供化学气相沉积装置 10），包括具有气体输入端口（14）和气体输出端口（16）的腔室（12），以及用于将硅衬底安装在腔室（12）内的装置（18），所述设备还包括连接 并且布置成提供氮气或惰性气体作为载气。

公开(公告)号：US07605060B2

公开(公告)日：2009-10-20

申请号：US10550853

申请日：2004-03-25

申请人： Philippe Meunier-Beillard ,  Mathieu Rosa Jozef Caymax

发明人： Philippe Meunier-Beillard ,  Mathieu Rosa Jozef Caymax

IPC分类号： H01L21/20

CPC分类号： C30B29/06 ,  C30B25/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) comprising silicon is provided with an n-type doped semiconductor region (2) comprising silicon by means of an epitaxial deposition process, wherein the epitaxial deposition process of the n-type region is performed by positioning the semiconductor body (1) in an epitaxial reactor and introducing in the reactor a first gas stream comprising a carrier gas and further gas streams comprising a gaseous compound comprising silicon and a gaseous compound comprising an element from the fifth column of the periodic system of elements, while heating the semiconductor body (1) to a growth temperature (Tg) and using an inert gas as the carrier gas. According to the invention for the gaseous compound comprising silicon a mixture is chosen of a first gaseous silicon compound which is free of chlorine and a second gaseous silicon compound comprising chlorine. Such a method allows for a very high carrier concentration in the in-situ doped grown region (3). Nitrogen is the preferred carrier gas.

摘要翻译： 本发明涉及一种制造半导体器件（10）的方法，该半导体器件（10）具有包括硅的半导体本体（1），其通过外延沉积工艺设置有包含硅的n型掺杂半导体区域（2），其中外延沉积 通过将半导体主体（1）定位在外延反应器中并在反应器中引入包含载气的第一气流以及包含含有硅的气态化合物和气态化合物的气流，进行n型区的工艺，该气态化合物包含 元件，同时将半导体本体（1）加热至生长温度（Tg）并使用惰性气体作为载气。 根据本发明，对于包含硅的气态化合物，混合物选自不含氯的第一气态硅化合物和包含氯的第二气态硅化合物。 这种方法允许在原位掺杂的生长区域（3）中具有非常高的载流子浓度。 氮气是优选的载气。