公开(公告)号：US20210341832A1

公开(公告)日：2021-11-04

申请号：US17245113

申请日：2021-04-30

Applicant: Photronics, Inc.

Inventor： Mohamed Ramadan ,  Michael Green ,  Young Ham ,  Christopher J. Progler

IPC: G03F1/70 ,  G06T7/00 ,  G06T7/13 ,  G06T7/70

Abstract: Methods and systems for building a photomask from obtained pattern information relating to a photomask that exhibits defects on wafer. Spatial domain analysis is conducted on the pattern information so that corrective photomask structures can be generated and applied to a photomask layout. A photomask is built using the corrective photomask structures. The photomask is verified for effectiveness.

公开(公告)号：US12164225B2

公开(公告)日：2024-12-10

申请号：US17245113

申请日：2021-04-30

Applicant: Photronics, Inc.

Inventor： Mohamed Ramadan ,  Michael Green ,  Young Ham ,  Christopher J. Progler

IPC: G03F1/70 ,  G06F30/398 ,  G06T7/00 ,  G06T7/13 ,  G06T7/70 ,  G06F119/18

Abstract: Methods and systems for building a photomask from obtained pattern information relating to a photomask that exhibits defects on wafer. Spatial domain analysis is conducted on the pattern information so that corrective photomask structures can be generated and applied to a photomask layout. A photomask is built using the corrective photomask structures. The photomask is verified for effectiveness.