PHOTODIODE AND MANUFACTURING METHOD THEREOF
    1.
    发明公开

    公开(公告)号:US20230369378A1

    公开(公告)日:2023-11-16

    申请号:US18129108

    申请日:2023-03-31

    CPC classification number: H01L27/14652 H01L27/1461 H01L27/14689

    Abstract: A photodiode comprises a substrate, a first collection layer, a first type well layer, a second type well layer and a second collection layer. The substrate has a first surface and a second surface. The substrate defines a bias region and a signal region. The first collection layer, the first type well layer, the first type well layer, the second type well layer, and the second collection layer are formed in the substrate. The first type well layer is disposed between the first surface and the first collection layer. The second type well layer is disposed between the first type well layer and the first collection layer. The second collection layer is located between the first surface and the second well layer.

Patent Agency Ranking