公开(公告)号：US20210020803A1

公开(公告)日：2021-01-21

申请号：US17061492

申请日：2020-10-01

Applicant: PixArt Imaging Incorporation

Inventor： Sen-Huang Huang ,  Hsin-Hui Hsu ,  Nien-Tse Chen

IPC: H01L31/18 ,  H01L21/02 ,  H01L31/103 ,  H01L27/146

Abstract: An optoelectronic device includes: a substrate made of a first material; a region in the substrate, the region being made of a second material different from the first material; an N-well in the region made of the second material; and a photo diode formed in the region by ion implantation. The second material for example is silicon germanium (Si1-xGex) or silicon carbide (Si1-yCy), wherein 0

公开(公告)号：US20180226531A1

公开(公告)日：2018-08-09

申请号：US15942536

申请日：2018-04-01

Applicant: PixArt Imaging Incorporation

Inventor： Sen-Huang Huang ,  Hsin-Hui Hsu ,  Nien-Tse Chen

IPC: H01L31/18 ,  H01L21/02 ,  H01L27/146 ,  H01L31/103

CPC classification number: H01L31/1812 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L31/103 ,  Y02E10/50

Abstract: An optoelectronic device includes: a substrate made of a first material; a region in the substrate, the region being made of a second material different from the first material; an N-well in the region made of the second material; and a photo diode formed in the region by ion implantation. The second material for example is silicon germanium (Si1-xGex) or silicon carbide (Si1-yCy), wherein 0