公开(公告)号：US11588473B1

公开(公告)日：2023-02-21

申请号：US17533605

申请日：2021-11-23

申请人： Potens Semiconductor Corp.

发明人： Wen Nan Huang ,  Ching Kuo Chen ,  Chih Ming Yu ,  Hsiang Chi Meng

IPC分类号： H03K3/011 ,  H02M1/42

摘要： A circuit with a metal-oxide semiconductor field-effect transistor and a diode module is applied to a power factor correction circuit, which can effectively reduce the heat generated by the whole system under heavy load. The circuit includes a metal-oxide semiconductor field-effect transistor and a diode module and a load determination unit. The diode module includes a plurality of diodes with a switch. The load determination unit can control the connection/disconnection of each diode in the diode module based on the magnitude of the load current. It can effectively reduce the current generated by each diode due to the load, thereby reducing the heat generation of the overall system. Moreover, due to the contact capacitance effect after the diodes are connected in parallel, the electromagnetic interference (EMI) characteristics of the power factor correction circuit of the system can be further optimized.

公开(公告)号：US20230037951A1

公开(公告)日：2023-02-09

申请号：US17533965

申请日：2021-11-23

申请人： Potens Semiconductor Corp.

发明人： Wen Nan Huang ,  Ching Kuo Chen ,  Chih Ming Yu ,  Hsiang Chi Meng ,  Tung Ming Lai

IPC分类号： H02M3/156 ,  H02M3/158

摘要： A metal-oxide semiconductor field-effect transistor with asymmetric parallel die and an implementation method thereof, comprising an inductor, a load recognition control unit and a metal-oxide semiconductor field-effect transistor having a first die, a second die, and a switch. The first die is larger in size than the second die. The inductor can produce a voltage signal when the load changes. The switch is controlled by the load recognition control unit such that different dies are switched on under different load conditions, thereby improving efficiency under light load condition in addition to reducing volume and cost.

公开(公告)号：US12101026B2

公开(公告)日：2024-09-24

申请号：US17533965

申请日：2021-11-23

申请人： Potens Semiconductor Corp.

发明人： Wen Nan Huang ,  Ching Kuo Chen ,  Chih Ming Yu ,  Hsiang Chi Meng ,  Tung Ming Lai

IPC分类号： H02M3/156 ,  H02M3/158

CPC分类号： H02M3/1566 ,  H02M3/1584

摘要： A metal-oxide semiconductor field-effect transistor with asymmetric parallel dies and a method of using the same, including an inductor, a load recognition control unit and a metal-oxide semiconductor field-effect transistor having a first die, a second die, and a switch. The first die is larger in size than the second die. The inductor produces a voltage signal when the load changes. The switch is controlled by the load recognition control unit such that different dies are switched on under different load conditions, thereby improving efficiency under light load condition in addition to reducing volume and cost.

公开(公告)号：US20230368950A1

公开(公告)日：2023-11-16

申请号：US17742153

申请日：2022-05-11

申请人： Potens Semiconductor Corp.

发明人： Wen Nan Huang ,  Ching Kuo Chen ,  Chih Ming Yu ,  Hsiang Chi Meng ,  I Ming Lo

IPC分类号： H01F1/01 ,  H01L23/31 ,  H01L23/29

CPC分类号： H01F1/015 ,  H01L23/3121 ,  H01L23/293

摘要： A packaging structure with a magnetocaloric material, comprising a substrate, a plurality of electrical connection structures, a die, and a sealing compound. A magnetocaloric material is added to the substrate. The die is electrically connected to the substrate through the electrical connection structures, and then encapsulated with the sealing compound. When the packaging structure is turned on, the magnetocaloric material in the substrate creates a magnetocaloric effect, which can not only take away the temperature of the packaging structure through magnetic refrigeration, but also increase the temperature difference between the packaging structure and the outside, thereby improving the efficiency of heat dissipation.