公开(公告)号：US20030102474A1

公开(公告)日：2003-06-05

申请号：US10004755

申请日：2001-12-03

Applicant: ProMOS Technologies Inc.

Inventor： Ting-Sing Wang

IPC: H01L023/58

CPC classification number: H01L22/34

Abstract: The present invention provides a semiconductor device for detecting gate defects and the method of using the same to detect gate defects. The semiconductor device is comprised of a semiconductor substrate having an oxide layer on the top, a gate having spacers, formed on the oxide layer and surrounding the semiconductor substrate, wherein the gate is also patterned to divide the semiconductor substrate into two parts not electrically connected, and a conductive layer formed on the semiconductor outside the gate. In addition, the method for using the semiconductor device of the present invention to detect gate defects is comprised of applying a ground voltage and a set voltage respectively to two parts divided by the gate in the semiconductor device, and measuring current between the two parts.

Abstract translation: 本发明提供一种用于检测栅极缺陷的半导体器件及其使用该方法来检测栅极缺陷。 半导体器件由在顶部具有氧化物层的半导体衬底，形成在氧化物层上并包围半导体衬底的间隔物的栅极组成，其中栅极也被图案化以将半导体衬底分成两个部分而不是电连接 以及形成在栅极外部的半导体上的导电层。 此外，使用本发明的半导体器件来检测栅极缺陷的方法包括分别将接地电压和设定电压施加到由半导体器件中的栅极划分的两个部分以及测量两个部分之间的电流。

公开(公告)号：US20030040176A1

公开(公告)日：2003-02-27

申请号：US10061562

申请日：2002-02-01

Applicant: ProMOS Technologies Inc.

Inventor： Ting-Sing Wang

IPC: H01L021/44 ,  H01L023/58

CPC classification number: H01L21/76897 ,  H01L22/34

Abstract: The present invention provides an inline detection device for self-aligned contact defects, formed in a semiconductor substrate, comprising: an active area, formed in the semiconductor substrate, comprised of a first gate having spacers on the side, at least one contact window formed between the spacers, a first contact plug formed in the first contact window, and a first contact area connecting with the first contact plug; and at least two probing pads, formed in the semiconductor substrate, comprised of a plurality of second gates formed with spacers on the side, second contact windows exposing the second gates, a second contact plug formed in the second contact window, and a second contact area connecting with the first contact area. According to the present invention, defects are detected by electrical measurement immediately following the formation of contact plugs. Moreover, conventional processes can be used for the method for fabricating the inline detection device for self-aligned contact according to the invention. The detection device is formed simultaneously with the semiconductor device without extra process or steps.

Abstract translation: 本发明提供了一种形成在半导体衬底中的自对准接触缺陷的在线检测装置，包括：形成在半导体衬底中的有源区，包括在侧面具有间隔物的第一栅极，形成至少一个接触窗口 在所述间隔件之间，形成在所述第一接触窗口中的第一接触插塞和与所述第一接触插塞连接的第一接触区域; 以及形成在所述半导体衬底中的至少两个探测焊盘，包括形成在所述侧面上的间隔物的多个第二栅极，暴露所述第二栅极的第二接触窗口，形成在所述第二接触窗口中的第二接触插塞和第二接触 区域与第一接触区域连接。 根据本发明，在形成接触塞后立即通过电测量来检测缺陷。 此外，根据本发明，常规方法可用于制造用于自对准接触的在线检测装置的方法。 该检测装置与半导体器件同时形成，而无需额外的工艺或步骤。