公开(公告)号：US20220352357A1

公开(公告)日：2022-11-03

申请号：US17838485

申请日：2022-06-13

Applicant: Purdue Research Foundation

Inventor： Tillmann C. Kubis ,  James Charles

IPC: H01L29/66 ,  H01L29/15

Abstract: A field-effect transistor (FET) includes a fin, an insulator region, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or more lightly doped than the first and second regions. The interior region of the fin is formed as a superlattice of layers of first and second materials alternating vertically. The insulator layer extends around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the gate are configured to generate an inhomogeneous electrostatic potential within the interior region, the inhomogeneous electrostatic potential cooperating with physical properties of the superlattice to cause scattering of charge carriers sufficient to change a quantum property of such charge carriers to change the ability of the charge carriers to move between the first and second materials.

公开(公告)号：US12154663B2

公开(公告)日：2024-11-26

申请号：US18056857

申请日：2022-11-18

Applicant: Purdue Research Foundation

Inventor： Tillmann Kubis ,  James Charles

IPC: G16C10/00 ,  G06F17/18 ,  G06F30/28 ,  G16C20/30 ,  G06F111/10 ,  G06F113/08

Abstract: A method of determining a property of a liquid system, the liquid system including at least one molecule in a solvent, comprises: generating a quantum model of the liquid system, the quantum model including a device region and a lead region, the device region being spherical, paraboloid, cubic or arbitrary in shape and encompassing the at least one molecule and a portion of the solvent of the liquid system, the lead region encompassing a region of the solvent surrounding the device region, determining a first property of the device region by solving a first quantum equation for the device region, determining the first property of the lead region by solving the first quantum equation under open boundary conditions for the lead region, and combining the first property of the device region with the first property of the lead region to arrive at a total first property for the liquid system.

公开(公告)号：US20230170054A1

公开(公告)日：2023-06-01

申请号：US18160578

申请日：2023-01-27

Applicant: Purdue Research Foundation

Inventor： Tillmann Kubis ,  James Charles

IPC: G16C10/00 ,  G16C20/30 ,  G06F30/28 ,  G06F17/18

CPC classification number: G16C10/00 ,  G16C20/30 ,  G06F30/28 ,  G06F17/18 ,  G06F2113/08

Abstract: A method of determining a property of a system, the system including at least one molecule in a solvent, comprises: generating a quantum model of the system, the quantum model including a device region and a lead region, the device region being spherical, paraboloid, cubic or arbitrary in shape and encompassing the at least one molecule and a portion of the solvent of the system, the lead region encompassing a region of the solvent surrounding the device region, determining a first property of the device region by solving a first quantum equation for the device region, determining the first property of the lead region by solving the first quantum equation under open boundary conditions for the lead region, and combining the first property of the device region with the first property of the lead region to arrive at a total first property for the system.

公开(公告)号：US11362200B2

公开(公告)日：2022-06-14

申请号：US16435457

申请日：2019-06-07

Applicant: Purdue Research Foundation

Inventor： Tillmann C. Kubis ,  James Charles

IPC: H01L29/66 ,  H01L29/15

Abstract: A field-effect transistor (FET) includes a fin, an insulator region, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or more lightly doped than the first and second regions. The interior region of the fin is formed as a superlattice of layers of first and second materials alternating vertically. The insulator layer extends around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the gate are configured to generate an inhomogeneous electrostatic potential within the interior region, the inhomogeneous electrostatic potential cooperating with physical properties of the superlattice to cause scattering of charge carriers sufficient to change a quantum property of such charge carriers to change the ability of the charge carriers to move between the first and second materials.

公开(公告)号：US12132102B2

公开(公告)日：2024-10-29

申请号：US17838485

申请日：2022-06-13

Applicant: Purdue Research Foundation

Inventor： Tillmann C. Kubis ,  James Charles

IPC: H01L29/66 ,  H01L29/15

CPC classification number: H01L29/66977 ,  H01L29/152

Abstract: A field-effect transistor (FET) includes a fin, an insulator region, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or more lightly doped than the first and second regions. The interior region of the fin is formed as a superlattice of layers of first and second materials alternating vertically. The insulator layer extends around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the gate are configured to generate an inhomogeneous electrostatic potential within the interior region, the inhomogeneous electrostatic potential cooperating with physical properties of the superlattice to cause scattering of charge carriers sufficient to change a quantum property of such charge carriers to change the ability of the charge carriers to move between the first and second materials.

公开(公告)号：US20230078275A1

公开(公告)日：2023-03-16

申请号：US18056857

申请日：2022-11-18

Applicant: Purdue Research Foundation

Inventor： Tillmann Kubis ,  James Charles

IPC: G16C10/00 ,  G16C20/30 ,  G06F30/28 ,  G06F17/18

Abstract: A method of determining a property of a liquid system, the liquid system including at least one molecule in a solvent, comprises: generating a quantum model of the liquid system, the quantum model including a device region and a lead region, the device region being spherical, paraboloid, cubic or arbitrary in shape and encompassing the at least one molecule and a portion of the solvent of the liquid system, the lead region encompassing a region of the solvent surrounding the device region, determining a first property of the device region by solving a first quantum equation for the device region, determining the first property of the lead region by solving the first quantum equation under open boundary conditions for the lead region, and combining the first property of the device region with the first property of the lead region to arrive at a total first property for the liquid system.

公开(公告)号：US11508463B2

公开(公告)日：2022-11-22

申请号：US16624833

申请日：2018-06-29

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Tillmann Kubis ,  James Charles

IPC: G16C10/00 ,  G16C20/30 ,  G06F30/28 ,  G06F17/18 ,  G06F113/08 ,  G06F111/10

Abstract: A method of determining at least one property of a liquid system using a modeling system, the liquid system including at least one molecule in a solvent, the modeling system including a processor, comprises generating a quantum model of the liquid system using the processor of the modeling system, the quantum model including a device region and a lead region, the device region being spherical, paraboloid, cubic or arbitrary in shape and encompassing the at least one molecule and a portion of the solvent of the liquid system, the lead region encompassing a region of the solvent surrounding the device region, determining a first property of the device region by solving a first quantum equation for the device region using the processor of the system, determining the first property of the lead region by solving the first quantum equation under open boundary conditions for the lead region using the processor of the system, and combining the first property of the device region with the first property of the lead region to arrive at a total first property for the liquid system using the processor of the system.