PHOTONIC DEVICES AND METHODS OF USING AND MAKING PHOTONIC DEVICES
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    发明申请
    PHOTONIC DEVICES AND METHODS OF USING AND MAKING PHOTONIC DEVICES 有权
    光电器件和使用和制造光电器件的方法

    公开(公告)号:US20140269800A1

    公开(公告)日:2014-09-18

    申请号:US14200427

    申请日:2014-03-07

    IPC分类号: H01S3/16 H01S5/10 H01S3/091

    摘要: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

    摘要翻译: 本发明的实例包括为硅光子系统设计的集成铒掺杂波导激光器。 在一些示例中,这些激光器包括由在氮化硅基波导中形成的分布式布拉格反射器(DBR)限定的激光腔。 这些DBR可以包括由晶片级浸没式光刻术定义的光栅特征,其中沉积有掺杂铒的氧化铝的上层作为制造过程的最后步骤。 所产生的倒脊波导与980nm泵(89%)和1.5μm激光(87%)波长的活性介质产生高的光强度重叠,泵激光强度重叠率超过93%。 输出功率可以为5mW或更高,并且在铒增益光谱(1536,1561和1596nm)的C波段和L波段内的宽间隔波长处显示激光。