-
公开(公告)号:US20140227862A1
公开(公告)日:2014-08-14
申请号:US14182076
申请日:2014-02-17
Applicant: QD VISION, INC.
Inventor: Inja Song , Craig Breen
IPC: H01L21/02
CPC classification number: H01L21/02601 , B01J13/22 , B82Y30/00 , H01L21/02518 , H01L21/02628
Abstract: In one embodiment, a method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and an aromatic solvent, introducing one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, reacting the precursors in the reaction mixture, without the addition of an acid compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals, and wherein an amide compound is formed in situ in the reaction mixture prior to isolating the coated semiconductor nanocrystals. In another embodiment, method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and a solvent, introducing an amide compound, one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, and reacting the precursors in the reaction mixture in the presence of the amide compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals. Semiconductor nanocrystals including coatings grown in accordance with the above methods are also disclosed.
Abstract translation: 在一个实施方案中,在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和芳族溶剂的第一混合物,引入一种或多种阳离子前体和一种或多种阴离子前体 进入第一混合物以形成用于形成半导体材料的反应混合物,使反应混合物中的前体在不加入酸化合物的条件下,在足以在至少一部分外部生长包含半导体材料的涂层的条件下反应 半导体纳米晶体的至少一部分的表面,并且其中在分离涂覆的半导体纳米晶体之前在反应混合物中原位形成酰胺化合物。 在另一个实施方案中,在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和溶剂的第一混合物,引入酰胺化合物,一种或多种阳离子前体和一种或多种 阴离子前体进入第一混合物以形成用于形成半导体材料的反应混合物,并且在酰胺化合物存在下使反应混合物中的前体在足以在至少一部分 半导体纳米晶体的至少一部分的外表面。 还公开了包括根据上述方法生长的涂层的半导体纳米晶体。
-
公开(公告)号:US09543142B2
公开(公告)日:2017-01-10
申请号:US14182076
申请日:2014-02-17
Applicant: QD VISION, INC.
Inventor: Inja Song , Craig Breen
CPC classification number: H01L21/02601 , B01J13/22 , B82Y30/00 , H01L21/02518 , H01L21/02628
Abstract: In one embodiment, a method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and an aromatic solvent, introducing one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, reacting the precursors in the reaction mixture, without the addition of an acid compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals, and wherein an amide compound is formed in situ in the reaction mixture prior to isolating the coated semiconductor nanocrystals. In another embodiment, method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and a solvent, introducing an amide compound, one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, and reacting the precursors in the reaction mixture in the presence of the amide compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals. Semiconductor nanocrystals including coatings grown in accordance with the above methods are also disclosed.
Abstract translation: 在一个实施方案中,在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和芳族溶剂的第一混合物,引入一种或多种阳离子前体和一种或多种阴离子前体 进入第一混合物以形成用于形成半导体材料的反应混合物,使反应混合物中的前体在不加入酸化合物的条件下,在足以在至少一部分外部生长包含半导体材料的涂层的条件下反应 半导体纳米晶体的至少一部分的表面,并且其中在分离涂覆的半导体纳米晶体之前在反应混合物中原位形成酰胺化合物。 在另一个实施方案中,在半导体纳米晶体群的至少一部分上形成包含半导体材料的涂层的方法包括提供包含半导体纳米晶体和溶剂的第一混合物,引入酰胺化合物,一种或多种阳离子前体和一种或多种 阴离子前体进入第一混合物以形成用于形成半导体材料的反应混合物,并且在酰胺化合物存在下使反应混合物中的前体在足以在至少一部分 半导体纳米晶体的至少一部分的外表面。 还公开了包括根据上述方法生长的涂层的半导体纳米晶体。
-